The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2010
Filed:
Mar. 14, 2008
Weidong Qian, Sunnyvale, CA (US);
Mark T. Ramsbey, Sunnyvale, CA (US);
Tazrien Kamal, San Jose, CA (US);
Weidong Qian, Sunnyvale, CA (US);
Mark T. Ramsbey, Sunnyvale, CA (US);
Tazrien Kamal, San Jose, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Abstract
A method for forming a semiconductor device includes forming a first dielectric layer over a first portion of a substrate, forming a charge storage layer over the first dielectric layer and etching a trench in the charge storage layer and the first dielectric layer, where the trench extends to the substrate. The method also includes implanting n-type impurities into the substrate to form an n-type region having a first depth and a first width and implanting p-type impurities into the substrate after implanting the n-type impurities, the p-type impurities forming a p-type region having a second depth and a second width. The method further includes forming a second dielectric layer over the charge storage layer and forming a control gate over the second dielectric layer.