The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2007
Filed:
Jun. 07, 2004
Nga-ching Alan Wong, San Jose, CA (US);
Weidong Qian, Sunnyvale, CA (US);
Sameer Haddad, San Jose, CA (US);
Mark Randolph, San Jose, CA (US);
Mark Ramsbey, Sunnyvale, CA (US);
Tazrien Kamal, San Jose, CA (US);
Nga-Ching Alan Wong, San Jose, CA (US);
Weidong Qian, Sunnyvale, CA (US);
Sameer Haddad, San Jose, CA (US);
Mark Randolph, San Jose, CA (US);
Mark Ramsbey, Sunnyvale, CA (US);
Tazrien Kamal, San Jose, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Abstract
The present invention pertains to implementing a lightly doped channel (LDC) implant in fashioning a memory device to improve Vt roll-off, among other things. The lightly doped channel helps to preserve channel integrity such that a threshold voltage (Vt) can be maintained at a relatively stable level and thereby mitigate Vt roll-off. The LDC also facilitates a reduction in buried bitline width and thus allows the bitlines to be brought closer together. As a result more devices can be formed or 'packed' within the same or a smaller area.