San Jose, CA, United States of America

Sameer S Haddad

This inventor holds 118 USPTO granted patents and 1 published patent application and 3 EPO patents, primarily in Non-Volatile Memory (CPC class G11C1-604). Top assignees: Advanced Micro Devices Corporation, Spansion LLC., Cypress Semiconductor Corporation. Active years: 1988-2023.

USPTO Granted Patents = 118 

% Patents Active = 83.1


Average Co-Inventor Count = 3.5

ph-index = 23

Forward Citations = 1,822(Granted Patents)

Forward Citations (Not Self Cited) = 1,780(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Santa Jose, CA (US) (2005)
  • San Jose, CA (US) (1988 - 2023)

Company Filing History:


Years Active: 1988-2023

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Areas of Expertise:
Non-Volatile Memory
Charge Trapping
Resistive Memory
Metal-Insulator-Metal
Memory Device
Data Retention
P-I-N Diode
Memory Fabrication
Erase Verification
Process Flow
Memory Cell Channels
118 patents (USPTO):Explore Patents

Title: Celebrating Innovations: The Contributions of Sameer S. Haddad

Introduction: Sameer S. Haddad, based in San Jose, California, is a prolific inventor with an impressive portfolio of 118 patents. His innovative work has significantly impacted the field of electronic devices, particularly in non-volatile memory technologies. This article explores his latest patents, career highlights, and professional collaborations, highlighting his contributions to the industry.

Latest Patents: Among his recent patents, Sameer S. Haddad has developed a process for forming an electronic device that includes a non-volatile memory (NVM) cell. This NVM cell comprises various components including drain/source and source/drain regions, alongside floating gate, control gate, and select gate electrodes. The unique aspect of his work lies in the integration of this NVM cell within a die that also encompasses power, high-voltage, and low-voltage transistors. The fabrication process allows for the formation of a relatively small NVM using a hard mask to define the gate stack and spacer configurations. Another innovative patent describes a semiconductor device with a memory gate on a charge storage structure and a select gate positioned in proximity, emphasizing the efficiency and structure provided by multiple dielectric layers.

Career Highlights: Throughout his career, Sameer S. Haddad has made notable contributions while working for leading companies in the semiconductor industry. He has held significant positions at Advanced Micro Devices Corporation and Spansion LLC, where his technical expertise has driven advancements in memory technologies.

Collaborations: His work in the industry has also seen collaborations with esteemed colleagues, including Mark T. Ramsbey and Chi K. Chang. This teamwork has fostered a collaborative environment that enhances innovation and technological development.

Conclusion: Sameer S. Haddad exemplifies the spirit of innovation through his extensive patent portfolio and contributions to the field of electronics. His developments in non-volatile memory technology and semiconductor devices signify significant strides in efficiency and functionality, establishing him as a notable figure in the world of inventors. As he continues to push the boundaries of technological advancements, his impact will likely resonate through future innovations in the industry.

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