The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 16, 2021

Filed:

Apr. 10, 2018
Applicant:

Cypress Semiconductor Corporation, San Jose, CA (US);

Inventors:

Chun Chen, San Jose, CA (US);

Shenqing Fang, Sunnyvale, CA (US);

Unsoon Kim, San Jose, CA (US);

Mark T. Ramsbey, Sunnyvale, CA (US);

Kuo Tung Chang, Saratoga, CA (US);

Sameer S. Haddad, San Jose, CA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/105 (2006.01); H01L 27/108 (2006.01); H01L 29/792 (2006.01); H01L 27/11573 (2017.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/792 (2013.01); H01L 27/11573 (2013.01); H01L 29/42344 (2013.01); H01L 29/66833 (2013.01);
Abstract

A split gate device that includes a memory gate and a select gate disposed side by side, a dielectric structure having a first portion disposed between the memory gate and a substrate and a second portion disposed along an inner sidewall of the select gate to separate the select gate from the memory gate, and a spacer formed over the select gate along an inner sidewall of the memory gate. Other embodiments of embedded split gate devices including high voltage and low voltage transistors are also disclosed.


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