Inventors with similar research interests:
Location History:
- Wappingers Falls, NY (US) (1999 - 2006)
- Hopewell Jct, NY (US) (2002 - 2006)
- Hopewell Jct., NY (US) (2003 - 2006)
- Fishkill, NY (US) (2003 - 2006)
- Hopewell Junction, NY (US) (2006)
- Hillsboro, OR (US) (2007 - 2015)
Company Filing History:
37 out of 57 
6 out of 11 
2 out of 3 
Years Active: 1999-2015
Areas of Expertise:
Title: The Inventor Spotlight: Tomoko Ogura
Introduction:
Tomoko Ogura, a prolific inventor based in Hopewell Junction, NY, has left a remarkable legacy in the field of memory technology. With an impressive portfolio of 50 patents, Ogura's innovative contributions have significantly impacted the world of non-volatile memory devices.
Latest Patents:
Among his latest patents is the "Complementary reference method for high reliability trap-type non-volatile memory," which introduces methods for complementary pairing of memory cells. This innovative approach involves utilizing physical memory cells in complementary pairs and leveraging complementary pairs of reference cells for each erase block. Additionally, Ogura's "Twin MONOS array for high-speed application" patent revolutionizes memory array operations by introducing a novel stitch area configuration for word gates and control gates.
Career Highlights:
Ogura's career has been marked by his tenure at companies like Halo LSI, Inc. and Halo LSI Design & Device Technology, Inc. During his time at these renowned organizations, Ogura demonstrated his expertise in memory technology and made significant advancements in the field.
Collaborations:
Throughout his career, Ogura has collaborated with esteemed colleagues such as Seiki Ogura and Nori Ogura. Their collective efforts have led to groundbreaking innovations in memory device design and operation.
Conclusion:
In conclusion, Tomoko Ogura stands as a distinguished figure in the world of memory technology, with a wealth of patents and a history of successful collaborations. His contributions have not only advanced the field but have also paved the way for future innovations in non-volatile memory devices.