For the Inventor, By the Inventor

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Hillsboro, OR, United States of America

Halo Lsi, Inc.

USPTO Granted Patents = 57

Forward Citations = 557

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13 inventors (with patents filed for the assignee):

Seiki Ogura (46 out of 131 patents)

Tomoko Ogura (37 out of 50 patents)

Nori Ogura (26 out of 27 patents)

4. Tomoya Saito (23 out of 33 patents)

5. Kimihiro Satoh (20 out of 23 patents)

6. Ki-Tae Park (6 out of 6 patents)

7. Yoshitaka Baba (5 out of 5 patents)

8. Tomoko Iwasaki (2 out of 2 patents)

9. Masaharu Kirihara (2 out of 3 patents)

10. Yutaka Hayashi (1 out of 42 patents)

11. Shimeno Koji (1 out of 1 patent)

12. Seki Ogura (1 out of 1 patent)

13. Kumihiro Satoh (1 out of 1 patent)

Core Competencies:

Nitride Flash Memory

Non-Volatile Memory

Twin MONOS Array

Trap-Charge Switch Connector

Charge Storage Device

Memory Dynamic Operations

NAND Device Structure

Voltage Boosting Scheme

Ballistic Flash Memory

Bit Line Decoding

Programmable Logic

Array Architecture

57 patents: Sort by Forward Citations

1. 9153592 - High density vertical structure nitride flash memory (2015-10-06),

2. 9123419 - Complementary reference method for high reliability trap-type non-volatile memory (2015-09-01),

3. 8710576 - High density vertical structure nitride flash memory (2014-04-29),

4. 8633544 - Twin MONOS array for high speed application (2014-01-21),

5. 8325542 - Complementary reference method for high reliability trap-type non-volatile memory (2012-12-04),

6. 8174885 - High speed operation method for twin MONOS metal bit array (2012-05-08),

7. 8139410 - Trap-charge non-volatile switch connector for programmable logic (2012-03-20),

8. 8089809 - Trap-charge non-volatile switch connector for programmable logic (2012-01-03),

9. 8027198 - Trap-charge non-volatile switch connector for programmable logic (2011-09-27),

10. 8023326 - Trap-charge non-volatile switch connector for programmable logic (2011-09-20),

11. 7936604 - High speed operation method for twin MONOS metal bit array (2011-05-03),

12. 7447077 - Referencing scheme for trap memory (2008-11-04),

13. 7411247 - Twin insulator charge storage device operation and its fabrication method (2008-08-12),

14. 7394703 - Twin insulator charge storage device operation and its fabrication method (2008-07-01),

15. 7391653 - Twin insulator charge storage device operation and its fabrication method (2008-06-24),

Halo LSI, Inc. is a leading technology company specializing in advanced lighting solutions. With a strong focus on innovation, we provide state-of-the-art lighting systems for a wide range of applications. Our cutting-edge products include intelligent LED lighting solutions, smart controls, and energy management systems. Our team of experts combines extensive industry knowledge with a passion for delivering high-quality products that offer superior efficiency and performance. At Halo LSI, we aim to enhance the well-being and productivity of our customers by creating lighting solutions that are efficient, cost-effective, and environmentally friendly.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Dec 30 2025

57 Patents

#8 in Hillsboro, OR

#74 in Oregon

#6,042 in US

#12,168 in the World

Hillsboro, OR, United States of America

Halo Lsi, Inc.

Forward Citations = 557

13 inventors:

Seiki Ogura (46 out of 131 patents)

Tomoko Ogura (37 out of 50 patents)

Nori Ogura (26 out of 27 patents)

4. Tomoya Saito (23 out of 33 patents)

5. Kimihiro Satoh (20 out of 23 patents)

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