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Wappingers Falls, NY, United States of America

Halo Lsi, Inc.

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USPTO Granted Patents = 57

% Expired Patents = 7.0

Forward Citations = 560

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13 inventors (with patents filed for the assignee):

Seiki Ogura (46 out of 131 patents)

Tomoko Ogura (37 out of 50 patents)

Nori Ogura (26 out of 27 patents)

4. Tomoya Saito (23 out of 33 patents)

5. Kimihiro Satoh (20 out of 23 patents)

6. Ki-Tae Park (6 out of 6 patents)

7. Yoshitaka Baba (5 out of 5 patents)

8. Tomoko Iwasaki (2 out of 2 patents)

9. Masaharu Kirihara (2 out of 3 patents)

10. Yutaka Hayashi (1 out of 42 patents)

11. Shimeno Koji (1 out of 1 patent)

12. Seki Ogura (1 out of 1 patent)

13. Kumihiro Satoh (1 out of 1 patent)

Core Competencies:

Vertical Structure

Nitride Flash Memory

Trap-Type Memory

Twin MONOS Array

Non-Volatile Switch

Charge Storage Device

Memory Array Organization

High-Speed Operation

Programming Method

Voltage Boosting Scheme

Dual-Bit Memory

Erasing Methods

57 patents: Sort by Forward Citations

1. 9153592 - High density vertical structure nitride flash memory (2015-10-06),

2. 9123419 - Complementary reference method for high reliability trap-type non-volatile memory (2015-09-01),

3. 8710576 - High density vertical structure nitride flash memory (2014-04-29),

4. 8633544 - Twin MONOS array for high speed application (2014-01-21),

5. 8325542 - Complementary reference method for high reliability trap-type non-volatile memory (2012-12-04),

6. 8174885 - High speed operation method for twin MONOS metal bit array (2012-05-08),

7. 8139410 - Trap-charge non-volatile switch connector for programmable logic (2012-03-20),

8. 8089809 - Trap-charge non-volatile switch connector for programmable logic (2012-01-03),

9. 8027198 - Trap-charge non-volatile switch connector for programmable logic (2011-09-27),

10. 8023326 - Trap-charge non-volatile switch connector for programmable logic (2011-09-20),

11. 7936604 - High speed operation method for twin MONOS metal bit array (2011-05-03),

12. 7447077 - Referencing scheme for trap memory (2008-11-04),

13. 7411247 - Twin insulator charge storage device operation and its fabrication method (2008-08-12),

14. 7394703 - Twin insulator charge storage device operation and its fabrication method (2008-07-01),

15. 7391653 - Twin insulator charge storage device operation and its fabrication method (2008-06-24),

Company Overview

Halo Lsi, Inc. is a technology company based in Wappingers Falls, NY, specializing in non-volatile memory solutions. The organization focuses on advanced memory technologies, including vertical structures and nitride flash memory, to enhance data storage capabilities. Their expertise extends to trap-type memory and twin MONOS arrays, which are designed for high-speed operation and efficient memory array organization. Halo Lsi is committed to innovation in charge storage devices, contributing to the evolution of memory technology in various applications.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 27 2026

57 Patents

#1 in Wappingers Falls, NY

#379 in New York

#6,254 in US

#12,581 in the World

Wappingers Falls, NY, United States of America

Halo Lsi, Inc.

Forward Citations = 560

13 inventors:

Seiki Ogura (46 out of 131 patents)

Tomoko Ogura (37 out of 50 patents)

Nori Ogura (26 out of 27 patents)

4. Tomoya Saito (23 out of 33 patents)

5. Kimihiro Satoh (20 out of 23 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Halo Lsi, Inc.. Retrieved from https://idiyas.com/company/halo-lsi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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