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Wappingers Falls, NY, United States of America

Halo Lsi Design Device Technology, Inc.

USPTO Granted Patents = 11

Forward Citations = 553

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6 inventors (with patents filed for the assignee):

Seiki Ogura (10 out of 131 patents)

Tomoko Ogura (6 out of 50 patents)

Yutaka Hayashi (1 out of 42 patents)

4. Tomoya Saito (1 out of 33 patents)

5. Yutaba Hayashi (1 out of 1 patent)

6. Yutaka Hayashi (1 out of 62 patents)

11 patents: Sort by Forward Citations

1. 6477088 - Usage of word voltage assistance in twin MONOS cell during program and erase (2002-11-05),

2. 6469935 - Array architecture nonvolatile memory and its operation methods (2002-10-22),

3. 6248633 - Process for making and programming and operating a dual-bit multi-level ballistic MONOS memory (2001-06-19),

4. 6180461 - Double sidewall short channel split gate flash memory (2001-01-30),

5. 6177318 - Integration method for sidewall split gate monos transistor (2001-01-23),

6. 6157058 - Low voltage EEPROM/NVRAM transistors and making method (2000-12-05),

7. 6133098 - Process for making and programming and operating a dual-bit multi-level (2000-10-17),

8. 6074914 - Integration method for sidewall split gate flash transistor (2000-06-13),

9. 6038169 - Read reference scheme for flash memory (2000-03-14),

10. 6002611 - Fast, low current program with auto-program for flash memory (1999-12-14),

11. 5780341 - Low voltage EEPROM/NVRAM transistors and making method (1998-07-14),

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USPTO Data Jan 1 1976 - Dec 30 2025

11 Patents

#2 in Wappingers Falls, NY

#1,497 in New York

#26,744 in US

#50,231 in the World

Wappingers Falls, NY, United States of America

Halo Lsi Design Device Technology, Inc.

Forward Citations = 553

6 inventors:

Seiki Ogura (10 out of 131 patents)

Tomoko Ogura (6 out of 50 patents)

Yutaka Hayashi (1 out of 42 patents)

4. Tomoya Saito (1 out of 33 patents)

5. Yutaba Hayashi (1 out of 1 patent)

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