The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 1998
Filed:
Dec. 06, 1996
Seiki Ogura, Wappingers Falls, NY (US);
Halo LSI Design & Device Technology, Inc., Wappingers Falls, NY (US);
Abstract
A method for fabricating an electrically programmable memory device which has efficiency of electron injection from the channel to floating gate is provided. A substrate is provided having source and drain region with a channel therebetween. A floating gate structure is formed over portions of the source and drain regions and the channel. The structure includes a dielectric layer and a conductor layer thereover. The channel under the floating gate has both horizontal and vertical components. After forming the vertical and horizontal components, an N- drain region is formed in self-alignment with the vertical channel step region's edge. The depth of the N- drain is greater than the source region.