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2 out of 428 Years Active: 2001-2012
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Title: Innovations of Chun Chen in Memory Device Technology
Introduction
Chun Chen, an accomplished inventor based in Boise, ID, has made significant contributions to the field of semiconductor technology with an impressive portfolio of 57 patents. His innovative approaches to programming methods for multi-level memory devices have paved the way for advancements in data storage and memory efficiency.
Latest Patents
Chun Chen's latest patents include groundbreaking methods for programming memory cells. One notable invention outlines a method for programming a memory cell that is fabricated on a substrate and consists of a source region, a drain region, a floating gate, and a control gate. This invention enables the selective configuration of the threshold voltage into one of at least three programming states. By generating a drain current and applying specific gate voltages, this method facilitates efficient programming of memory cells.
Additionally, he has developed a method for creating a double-doped polysilicon floating gate in semiconductor memory elements. This invention involves constructing a floating gate comprised of two layers, each doped with different types of dopant materials. This innovative design enhances the functionality of memory devices by improving their operational capabilities.
Career Highlights
Chun Chen has worked with prominent organizations such as Micron Technology Incorporated and Round Rock Research, LLC. His extensive experience in these leading companies has further solidified his expertise in semiconductor technologies and memory device innovations.
Collaborations
Throughout his career, Chun Chen has collaborated with other talented professionals, including Andrei Mihnea and Kirk D. Prall. These collaborations have contributed to his success in developing cutting-edge technologies and advancing the field of memory devices.
Conclusion
Chun Chen's innovative work has not only resulted in numerous patents but has also enhanced the efficiency and capability of memory devices. His contributions to programming methods and floating gate construction continue to influence the future of semiconductor technology, showcasing the vital role of inventors in driving scientific progress.