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Location History:
- Meridian, ID (US) (2000 - 2007)
- Boise, ID (US) (1999 - 2024)
Years Active: 1999-2025
Title: Scott James Derner: Innovator Extraordinaire in Memory Technology
Introduction:
Scott James Derner, a resident of Boise, ID (US), is a highly accomplished inventor specializing in memory technology. With an impressive portfolio of 123 patents, Derner has made significant contributions to the field of storage and offset memory cells, as well as memory array bit inversion. This article explores his latest patents, career highlights, collaborations, and celebrates his innovative achievements.
Latest Patents:
Derner's recent patents highlight his expertise in memory cell design and operation. One notable invention is the development of storage and offset memory cells. This apparatus features a sense amplifier, an array of storage memory cells, and an array of offset memory cells. Each memory cell contains a capacitor with specific capacitance, allowing for efficient data storage and retrieval.
Another groundbreaking invention by Derner is the memory array bit inversion method. This technique enables memory cells, such as ferroelectric memory cells, to be written with an inverted logic state while preserving the intended logic state. By configuring different sets of transistors around the sense component of each cell, this invention facilitates the reading and writing of desired and inverted logic states.
Career Highlights:
Scott James Derner has made substantial contributions during his tenure in renowned companies, including Micron Technology Incorporated and Nan Ya Technology Corporation. His expertise in memory technology has played a crucial role in the development of cutting-edge memory solutions, ensuring advancements in data storage and retrieval processes.
Collaborations:
Throughout his career, Derner has had the opportunity to collaborate with exceptional professionals in the field. Notably, he has worked alongside Christopher John Kawamura and Charles L. Ingalls, both esteemed individuals with significant contributions in memory technology. Such collaborations have not only enhanced Derner's understanding of the industry but have also fostered a collaborative spirit, resulting in groundbreaking innovations.
Conclusion:
Scott James Derner's outstanding repertoire of patents and his significant contributions to memory technology make him an esteemed inventor in his field. His expertise in storage and offset memory cells, as well as memory array bit inversion, have paved the way for advancements in data storage and retrieval. Derner's collaborations with industry experts have further enriched his knowledge and fostered innovation. We eagerly anticipate his future contributions to the ever-evolving world of memory technology.
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