The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2023
Filed:
Oct. 08, 2021
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventor:
Scott J. Derner, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/12 (2006.01); G11C 11/4091 (2006.01); G11C 11/408 (2006.01); G11C 11/4094 (2006.01); G11C 7/06 (2006.01); G11C 8/08 (2006.01); G11C 11/4099 (2006.01); G11C 7/14 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4091 (2013.01); G11C 7/065 (2013.01); G11C 7/12 (2013.01); G11C 8/08 (2013.01); G11C 11/4085 (2013.01); G11C 11/4094 (2013.01); G11C 7/14 (2013.01); G11C 11/4099 (2013.01);
Abstract
An example apparatus includes a sense amplifier, a plurality of storage memory cells coupled to the sense amplifier via a first digit line, and a plurality of offset memory cells coupled to the sense amplifier via a second digit line. The plurality of storage memory cells and the plurality of offset memory cells can comprise an array of memory cells. Each of the storage memory cells and the offset memory cells can include a respective capacitor having a particular capacitance.