The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2023
Filed:
Oct. 15, 2021
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Scott J. Derner, Boise, ID (US);
Christopher J. Kawamura, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01); H01L 27/11514 (2017.01); H01L 27/11509 (2017.01);
U.S. Cl.
CPC ...
G11C 11/2257 (2013.01); G11C 11/221 (2013.01); G11C 11/2259 (2013.01); G11C 11/2273 (2013.01); G11C 11/2293 (2013.01); H01L 27/11514 (2013.01); G11C 11/2275 (2013.01); H01L 27/11509 (2013.01);
Abstract
Apparatuses and methods are disclosed that include ferroelectric memory and for operating ferroelectric memory. An example apparatus includes a capacitor having a first plate, a second plate, and a ferroelectric dielectric material. The apparatus further includes a first digit line and a first selection component configured to couple the first plate to the first digit line, and also includes a second digit line and a second selection component configured to couple the second plate to the second digit line.