The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 25, 2024

Filed:

Jan. 31, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Scott J. Derner, Boise, ID (US);

Charles L Ingalls, Meridian, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 53/30 (2023.01); H01L 23/528 (2006.01); H01L 29/08 (2006.01); H01L 29/78 (2006.01); H10B 12/00 (2023.01); H10B 53/20 (2023.01); H01L 27/02 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H10B 53/30 (2023.02); H01L 23/528 (2013.01); H01L 29/0847 (2013.01); H01L 29/78 (2013.01); H01L 29/7827 (2013.01); H10B 12/00 (2023.02); H10B 53/20 (2023.02); H01L 27/0207 (2013.01); H01L 28/75 (2013.01);
Abstract

Some embodiments include an integrated assembly. The integrated assembly has a first transistor with a horizontally-extending channel region between a first source/drain region and a second source/drain region; has a second transistor with a vertically-extending channel region between a third source/drain region and a fourth source/drain region; and has a capacitor between the first and second transistors. The capacitor has a first electrode, a second electrode, and an insulative material between the first and second electrodes. The first electrode is electrically connected with the first source/drain region, and the second electrode is electrically connected with the third source/drain region. A digit line is electrically connected with the second source/drain region. A conductive structure is electrically connected with the fourth source/drain region.


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