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For the Inventor, By the Inventor

Edina, MN, United States of America

Yong Lu

USPTO Granted Patents = 114 

 

Average Co-Inventor Count = 3.7

ph-index = 13

Forward Citations = 1,066(Granted Patents)

Forward Citations (Not Self Cited) = 1,026(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Plymouth, MN (US) (2000 - 2008)
  • Edina, CA (US) (2012)
  • Rosemount, MN (US) (2004 - 2014)
  • Edina, MN (US) (2010 - 2015)

Company Filing History:

goldMedal73 out of 8,679 
 
Seagate Technology Incorporated
 patents
silverMedal35 out of 37,920 
 
Micron Technology Incorporated
 patents
bronzeMedal3 out of 3,645 
 
Honeywell G.m.b.h.
 patents
4. 2 out of 11,124 
 
Broadcom Corporation
 patents
5. 1 out of 126 
 
The University of Waterloo
 patents

Years Active: 2000-2015

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Areas of Expertise:
Non-Volatile Memory
Resistive Sense Memory
Magnetic Memory
Mram
Programmable Memory Cell
Spin-Transfer Torque Memory
Three-Dimensional Memory
Bit Line Charge Accumulation
Hierarchical Memory Architecture
Data Storage Techniques
Asymmetric Write Current Compensation
Floating Source Line Architecture
114 patents (USPTO):Explore Patents
1. 9136217 - One-time programmable memory cell (2015-09-15),
2. 9030867 - Bipolar CMOS select device for resistive sense memory (2015-05-12),
3. 9007805 - Programmable diode array for high density OTP application (2015-04-14),
4. 8934281 - Bit set modes for a resistive sense memory cell array (2015-01-13),
5. 8861244 - Non-volatile memory cell with multiple resistive sense elements sharing a common switching device (2014-10-14),
6. 8792264 - Method of switching out-of-plane magnetic tunnel junction cells (2014-07-29),
7. 8681541 - Magnetic memory with separate read and write paths (2014-03-25),
8. 8638597 - Bit line charge accumulation sensing for resistive changing memory (2014-01-28),
9. 8582347 - Floating source line architecture for non-volatile memory (2013-11-12),
10. 8520432 - Magnetic memory with separate read and write paths (2013-08-27),
11. 8519495 - Single line MRAM (2013-08-27),
12. 8514637 - Systems and methods of cell selection in three-dimensional cross-point array memory devices (2013-08-20),
13. 8514605 - MRAM diode array and access method (2013-08-20),
14. 8508980 - Polarity dependent switch for resistive sense memory (2013-08-13),
15. 8508973 - Method of switching out-of-plane magnetic tunnel junction cells (2013-08-13),

Title: Inventor Yong Lu: Revolutionizing Technology in Edina, MN

Introduction: Yong Lu is a visionary inventor based in Edina, MN, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Yong Lu holds several patents in cutting-edge technologies related to artificial intelligence, renewable energy, and sustainable materials.

Career Highlights: With a career spanning over two decades, Yong Lu has worked with top research institutions and leading tech companies to develop innovative solutions that have reshaped industries.

Collaborations: Yong Lu has collaborated with renowned scientists, engineers, and entrepreneurs to bring his ideas to life, fostering a culture of creativity and excellence in the innovation ecosystem.

Conclusion: Yong Lu's passion for pushing the boundaries of technology and his relentless pursuit of innovation continue to inspire the next generation of inventors and entrepreneurs.

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