Yong Lu

This inventor holds 114 USPTO granted patents and 1 published patent application and 2 EPO patents, primarily in Non-Volatile Memory (CPC class G11C1-100). Top assignees: Seagate Technology Incorporated, Micron Technology Incorporated, Honeywell G.m.b.h.. Active years: 2000-2015.

USPTO Granted Patents = 114 (Patent Applications = 1)

% Patents Active = 50.0

EPO Patents = 2 (Patent Applications = 3)

Average Co-Inventor Count = 3.7

ph-index = 13

Forward Citations = 1,067(Granted Patents)

Forward Citations (Not Self Cited) = 1,026(Dec 10, 2025)

Inventors with similar research interests:

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Location History:

Plymouth, MN (US) (2000 - 2008)
Edina, CA (US) (2012)
Rosemount, MN (US) (2004 - 2014)
Edina, MN (US) (2010 - 2015)

Company Filing History:

73 out of 8,744

Seagate Technology Incorporated

patents

35 out of 39,149

Micron Technology Incorporated

The University of Waterloo

patents

Years Active: 2000-2015

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Areas of Expertise:

Programmable Diode Array

Resistive Sense Memory

Magnetic Tunnel Junction

3D Cross-Point Array

Spin-Transfer Torque

Error Correction Codes

Bit Line Charge Sensing

Non-Volatile Memory Cell

Asymmetric Write Compensation

Floating Source Line

MRAM Architecture

Data Storage Techniques

114 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9136217 - One-time programmable memory cell (2015-09-15),

2. 9030867 - Bipolar CMOS select device for resistive sense memory (2015-05-12),

3. 9007805 - Programmable diode array for high density OTP application (2015-04-14),

4. 8934281 - Bit set modes for a resistive sense memory cell array (2015-01-13),

5. 8861244 - Non-volatile memory cell with multiple resistive sense elements sharing a common switching device (2014-10-14),

6. 8792264 - Method of switching out-of-plane magnetic tunnel junction cells (2014-07-29),

7. 8681541 - Magnetic memory with separate read and write paths (2014-03-25),

8. 8638597 - Bit line charge accumulation sensing for resistive changing memory (2014-01-28),

9. 8582347 - Floating source line architecture for non-volatile memory (2013-11-12),

10. 8520432 - Magnetic memory with separate read and write paths (2013-08-27),

11. 8519495 - Single line MRAM (2013-08-27),

12. 8514637 - Systems and methods of cell selection in three-dimensional cross-point array memory devices (2013-08-20),

13. 8514605 - MRAM diode array and access method (2013-08-20),

14. 8508980 - Polarity dependent switch for resistive sense memory (2013-08-13),

15. 8508973 - Method of switching out-of-plane magnetic tunnel junction cells (2013-08-13),

Title: Inventor Yong Lu: Revolutionizing Technology in Edina, MN

Introduction: Yong Lu is a visionary inventor based in Edina, MN, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Yong Lu holds several patents in cutting-edge technologies related to artificial intelligence, renewable energy, and sustainable materials.

Career Highlights: With a career spanning over two decades, Yong Lu has worked with top research institutions and leading tech companies to develop innovative solutions that have reshaped industries.

Collaborations: Yong Lu has collaborated with renowned scientists, engineers, and entrepreneurs to bring his ideas to life, fostering a culture of creativity and excellence in the innovation ecosystem.

Conclusion: Yong Lu's passion for pushing the boundaries of technology and his relentless pursuit of innovation continue to inspire the next generation of inventors and entrepreneurs.