The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2015
Filed:
Sep. 10, 2012
Jonathan Schmitt, Eden Praire, MN (US);
Roy Milton Carlson, Plymouth, MN (US);
Yong LU, Edina, MN (US);
Owen Hynes, Chandler, AZ (US);
Jonathan Schmitt, Eden Praire, MN (US);
Roy Milton Carlson, Plymouth, MN (US);
Yong Lu, Edina, MN (US);
Owen Hynes, Chandler, AZ (US);
Broadcom Corporation, Irvine, CA (US);
Abstract
A programmable memory cell including a thick oxide spacer transistor, a programmable thin oxide anti-fuse disposed adjacent to the thick oxide spacer transistor, and first and second thick oxide access transistors. The thick oxide spacer transistor and first and second thick oxide access transistors can include an oxide layer that is thicker than an oxide layer of the programmable thin oxide anti-fuse. The programmable thin oxide anti-fuse and the thick oxide spacer transistor can be natively doped. The first and second thick oxide access transistors can be doped so as to have standard threshold voltage characteristics.