The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 2013

Filed:

Dec. 21, 2010
Applicants:

Yong LU, Rosemount, MN (US);

Hongyue Liu, Maple Grove, MN (US);

Zheng Gao, Savage, MN (US);

Insik Jin, Eagan, MN (US);

Dimitar V. Dimitrov, Edina, MN (US);

Inventors:

Yong Lu, Rosemount, MN (US);

Hongyue Liu, Maple Grove, MN (US);

Zheng Gao, Savage, MN (US);

Insik Jin, Eagan, MN (US);

Dimitar V. Dimitrov, Edina, MN (US);

Assignee:

Seagate Technology LLC, Cupertino, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/14 (2006.01);
U.S. Cl.
CPC ...
Abstract

Magnetic memory having separate read and write paths is disclosed. The magnetic memory unit includes a ferromagnetic strip having a first end portion with a first magnetization orientation, an opposing second end portion with a second magnetization orientation, and a middle portion between the first end portion and the second end portion, the middle portion having a free magnetization orientation. The first magnetization orientation opposes the second magnetization orientation. A tunneling barrier separates a magnetic reference layer from the middle portion forming a magnetic tunnel junction. A bit line is electrically coupled to the second end portion. A source line is electrically coupled to the first end portion and a read line is electrically coupled to the magnetic tunnel junction.


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