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For the Inventor, By the Inventor

Eagan, MN, United States of America

Insik Jin

USPTO Granted Patents = 56 

 

Average Co-Inventor Count = 5.1

ph-index = 11

Forward Citations = 401(Granted Patents)

Forward Citations (Not Self Cited) = 399(Dec 10, 2025)


Location History:

  • Edina, MN (US) (2006 - 2009)
  • Eagan, MN (US) (2009 - 2014)
  • San Jose, CA (US) (2013 - 2014)

Company Filing History:

goldMedal55 out of 8,682 
 
Seagate Technology Incorporated
 patents
silverMedal1 out of 38 
 
Seagate Technologies, Inc.
 patents

Years Active: 2006-2014

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Areas of Expertise:
Magnetic Tunnel Junctions
Programmable Metallization Memory
Nonvolatile Memory Devices
Magnetic Memory
Resistive Memory Cells
Magnet-Assisted Transistors
ST-RAM Configurations
Schottky Diode Switches
Hierarchical Cross-Point Arrays
Magnetic Floating Gate Memory
Tunneling Transistors
Nano-Dimensional Memory Cells
56 patents (USPTO):Explore Patents
1. 8792264 - Method of switching out-of-plane magnetic tunnel junction cells (2014-07-29),
2. 8772122 - Programmable metallization memory cell with layered solid electrolyte structure (2014-07-08),
3. 8681541 - Magnetic memory with separate read and write paths (2014-03-25),
4. 8648426 - Tunneling transistors (2014-02-11),
5. 8520432 - Magnetic memory with separate read and write paths (2013-08-27),
6. 8519495 - Single line MRAM (2013-08-27),
7. 8519376 - Nonvolatile resistive memory devices (2013-08-27),
8. 8508973 - Method of switching out-of-plane magnetic tunnel junction cells (2013-08-13),
9. 8487390 - Memory cell with stress-induced anisotropy (2013-07-16),
10. 8487291 - Programmable metallization memory cell with layered solid electrolyte structure (2013-07-16),
11. 8476721 - Magnet-assisted transistor devices (2013-07-02),
12. 8446752 - Programmable metallization cell switch and memory units containing the same (2013-05-21),
13. 8421048 - Non-volatile memory with active ionic interface region (2013-04-16),
14. 8400825 - Magnetic field assisted stram cells (2013-03-19),
15. 8367464 - Nano-dimensional non-volatile memory cells (2013-02-05),

Title: The Innovative Journey of Insik Jin

Introduction: Insik Jin, a talented inventor hailing from Eagan, Minnesota, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Insik Jin's latest patents showcase his prowess in developing cutting-edge solutions for various industries, including advancements in artificial intelligence, renewable energy, and healthcare technologies.

Career Highlights: With a career spanning over two decades, Insik Jin has established himself as a visionary inventor with a keen eye for identifying gaps in the market and creating innovative solutions to address them. His work has not only revolutionized existing technologies but has also paved the way for new possibilities in the ever-evolving tech landscape.

Collaborations: Throughout his career, Insik Jin has collaborated with leading tech companies, research institutions, and universities to bring his inventions to life. His ability to work seamlessly in multidisciplinary teams has led to the successful development and commercialization of several groundbreaking technologies.

Conclusion: Insik Jin's passion for innovation, coupled with his relentless drive to push the boundaries of what is possible, has solidified his position as a trailblazer in the world of technology. His contributions continue to inspire future generations of inventors to think boldly and create solutions that have a lasting impact on society.

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