The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2013

Filed:

Apr. 18, 2011
Applicants:

Yang LI, Bloomington, MN (US);

Insik Jin, Eagan, MN (US);

Harry Liu, Maple Grove, MN (US);

Song S. Xue, Edina, MN (US);

Shuiyuan Huang, Apple Valley, MN (US);

Michael X. Tang, Bloomington, MN (US);

Inventors:

Yang Li, Bloomington, MN (US);

Insik Jin, Eagan, MN (US);

Harry Liu, Maple Grove, MN (US);

Song S. Xue, Edina, MN (US);

Shuiyuan Huang, Apple Valley, MN (US);

Michael X. Tang, Bloomington, MN (US);

Assignee:

Seagate Technology LLC, Scotts Valley, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/82 (2006.01); H01L 21/00 (2006.01); H01L 21/326 (2006.01);
U.S. Cl.
CPC ...
Abstract

A transistor device includes a magnetic field source adapted to deflect a flow of free electron carriers within a channel of the device, between a source region and a drain region thereof. According to preferred configurations, the magnetic field source includes a magnetic material layer extending over a side of the channel that is opposite a gate electrode of the transistor device.


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