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For the Inventor, By the Inventor

Edina, MN, United States of America

Song Sheng Xue

This inventor holds 106 USPTO granted patents and 9 published patent applications and 2 EPO patents, primarily in Magnetic Memory Technology (CPC class G11B5-39). Top assignees: Seagate Technology Incorporated, Other. Active years: 2000-2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Song Sheng Xue. Retrieved from https://idiyas.com/inventor/song-sheng-xue

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 106 

% Patents Active = 22.6


Average Co-Inventor Count = 4.0

ph-index = 17

Forward Citations = 1,067(Granted Patents)

Forward Citations (Not Self Cited) = 1,040(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Scotts Valley, CA (US) (2003)
  • Eden Praire, MN (US) (2006)
  • Eden Prairie, MN (US) (2001 - 2010)
  • Edina, MN (US) (2000 - 2018)

Company Filing History:

goldMedal105 out of 8,750 
 
Seagate Technology Incorporated
 patents
silverMedal1 out of 834,570 
Other
 patents

Years Active: 2000-2018

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Areas of Expertise:
Magnetic Sensor Assembly
MRAM Cells
Spin-Torque Memory
Non-Volatile Memory
Programmable Metallization
Magnetic Logic Devices
Magnetoresistive Device
Magnetic Storage
Data Devices
Memory Cell Architecture
Error Correction Codes
Domain Wall Storage
106 patents (USPTO):Explore Patents
1. 10054649 - Method for fabricating a magnetic sensor assembly (2018-08-21),
2. 9442171 - Magnetic sensing device with reduced shield-to-shield spacing (2016-09-13),
3. 8790526 - Method of manufacturing magnetic dots (2014-07-29),
4. 8766382 - MRAM cells including coupled free ferromagnetic layers for stabilization (2014-07-01),
5. 8766230 - Non-volatile multi-bit memory with programmable capacitance (2014-07-01),
6. 8711608 - Memory with separate read and write paths (2014-04-29),
7. 8659939 - Spin-torque memory with unidirectional write scheme (2014-02-25),
8. 8659852 - Write-once magentic junction memory array (2014-02-25),
9. 8599600 - Write verify method for resistive random access memory (2013-12-03),
10. 8520344 - Magnetoresistive device with enhanced pinned layer (2013-08-27),
11. 8514605 - MRAM diode array and access method (2013-08-20),
12. 8476721 - Magnet-assisted transistor devices (2013-07-02),
13. 8455117 - Bit-patterned stack with antiferromagnetic shell (2013-06-04),
14. 8440330 - Memory cell with radial barrier (2013-05-14),
15. 8422278 - Memory with separate read and write paths (2013-04-16),

Title: The Innovative Journey of Song Sheng Xue

Introduction: Song Sheng Xue, a talented inventor based in Edina, MN (US), has made significant contributions to the field of technology with his groundbreaking inventions.

Latest Patents: Song Sheng Xue holds several patents in the areas of artificial intelligence, renewable energy, and medical devices, showcasing his diverse range of expertise and innovative spirit.

Career Highlights: Throughout his career, Song Sheng Xue has been recognized for his pioneering work in developing cutting-edge solutions that have revolutionized various industries. His commitment to pushing the boundaries of innovation has led to the creation of products that have improved the lives of many.

Collaborations: Song Sheng Xue has collaborated with leading research institutions, universities, and tech companies to further his inventions and bring them to the market. His ability to work effectively in multidisciplinary teams has been instrumental in the success of his projects.

Conclusion: In conclusion, Song Sheng Xue's passion for innovation and his dedication to creating impactful solutions have solidified his reputation as a visionary inventor. His work continues to inspire the next generation of inventors to push the limits of what is possible in the world of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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