The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2014
Filed:
Aug. 17, 2010
Xuguang Wang, Maple Grove, MN (US);
Shuiyuan Huang, Apple Valley, MN (US);
Dimitar V. Dimitrov, Edina, MN (US);
Michael Xuefei Tang, Bloomington, MN (US);
Song S. Xue, Edina, MN (US);
Xuguang Wang, Maple Grove, MN (US);
Shuiyuan Huang, Apple Valley, MN (US);
Dimitar V. Dimitrov, Edina, MN (US);
Michael Xuefei Tang, Bloomington, MN (US);
Song S. Xue, Edina, MN (US);
Seagate Technology LLC, Cupertino, CA (US);
Abstract
Non-volatile multi-bit memory with programmable capacitance is disclosed. Illustrative data memory units include a substrate including a source region and a drain region; and a gate stack structure over the substrate and between the source region and drain region. The gate stack structure includes a first solid electrolyte cell and a second solid electrolyte cell. The solid electrolyte cells having a capacitance that is controllable between at least two states. A gate contact layer is electrically coupled to a voltage source. The first solid electrolyte cell and the second solid electrolyte cell separate the gate contact layer from the substrate.