The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2013
Filed:
Jun. 08, 2012
Xiaobin Wang, Chanhassen, MN (US);
Haiwen Xi, Prior Lake, MN (US);
Hongyue Liu, Maple Grove, MN (US);
Insik Jin, Eagan, MN (US);
Andreas Roelofs, Eden Prairie, MN (US);
Eileen Yan, Edina, MN (US);
Dimitar V. Dimitrov, Edina, MN (US);
Xiaobin Wang, Chanhassen, MN (US);
Haiwen Xi, Prior Lake, MN (US);
Hongyue Liu, Maple Grove, MN (US);
Insik Jin, Eagan, MN (US);
Andreas Roelofs, Eden Prairie, MN (US);
Eileen Yan, Edina, MN (US);
Dimitar V. Dimitrov, Edina, MN (US);
Seagate Technologies LLC, Scotts Valley, CA (US);
Abstract
Memory units that have a magnetic tunnel junction cell that utilizes spin torque and a current induced magnetic field to assist in the switching of the magnetization orientation of the free layer of the magnetic tunnel junction cell. The memory unit includes a spin torque current source for passing a current through the magnetic tunnel junction cell, the spin torque current source having a direction perpendicular to the magnetization orientations, and also includes a magnetic ampere field current source is oriented in a direction orthogonal or at some angles to the magnetization orientations.