The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2013
Filed:
Feb. 17, 2009
Insik Jin, Eagan, MN (US);
Hongyue Liu, Maple Grove, MN (US);
Yong LU, Rosemount, MN (US);
Xiaobin Wang, Chanhassen, MN (US);
Insik Jin, Eagan, MN (US);
Hongyue Liu, Maple Grove, MN (US);
Yong Lu, Rosemount, MN (US);
Xiaobin Wang, Chanhassen, MN (US);
Seagate Technology LLC, Cupertino, CA (US);
Abstract
A magnetic memory device includes a first electrode separated from a second electrode by a magnetic tunnel junction. The first electrode provides a write current path along a length of the first electrode. The magnetic tunnel junction includes a free magnetic layer having a magnetization orientation that is switchable between a high resistance state magnetization orientation and a low resistance state magnetization orientation. The free magnetic layer is spaced from the first electrode a distance of less than 10 nanometers. A current passing along the write current path generates a magnetic field. The magnetic field switches the free magnetic layer magnetization orientation between a high resistance state magnetization orientation and a low resistance state magnetization orientation.