The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2014

Filed:

May. 21, 2012
Applicants:

Chulmin Jung, Eden Prairie, MN (US);

Yong LU, Rosemount, MN (US);

Kang Yong Kim, Boise, ID (US);

Young Pil Kim, Eden Prairie, MN (US);

Inventors:

Chulmin Jung, Eden Prairie, MN (US);

Yong Lu, Rosemount, MN (US);

Kang Yong Kim, Boise, ID (US);

Young Pil Kim, Eden Prairie, MN (US);

Assignee:

Seagate Technology LLC, Cupertino, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A memory array includes a plurality of magneto-resistive changing memory cells. Each resistive changing memory cell is electrically between a source line and a bit line and a transistor electrically between the resistive changing memory cell and the bit line. The transistor has a gate electrically between a source region and a drain region and the source region being electrically between the r magneto-resistive changing memory cell and the gate. A word line is electrically coupled to the gate. A bit line charge accumulation sensing for magneto-resistive changing memory is also disclosed.


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