Agostino Pirovano

Agostino Pirovano: The Innovative Mind behind Self-aligned Memory Structures and Self-selecting Memory Arrays

Agostino Pirovano is a prolific inventor and patent holder based in Milan, Italy. With a total of 121 patents to his name, Pirovano has contributed significantly to the development and advancement of memory technologies in the semiconductor industry. Two of his latest patents, "Techniques for forming self-aligned memory structures" and "Self-selecting memory array with horizontal access lines," showcase his ingenuity and foresight in this field.

The patent for "Techniques for forming self-aligned memory structures," as the name suggests, describes a novel method for creating efficient and reliable memory cells in layered materials. The technique involves etching a layered assembly of materials, including a first conductive material and a first sacrificial material, to form channels along a first direction that creates a first set of sections. An insulative material is then deposited within each of the channels, and a second sacrificial material is added onto the sections and the insulating material. The process continues with the etching of a second set of channels along a different direction that creates a second set of sections, and the deposition of insulating and memory materials in the channels. Finally, the sacrificial materials are removed, leaving a cavity in the layered assembly, which is filled with a memory material. This technique enables the creation of self-aligned and high-density memory structures with minimal process steps and improved performance.

The patent for "Self-selecting memory array with horizontal access lines" presents another innovative approach to memory design. The patent describes a memory array that includes first and second access lines extending in different directions, allowing for horizontal access to the memory cells. At each intersection of the access lines, a plurality of memory cells exists, and each cell group is in contact with a self-selecting material. The self-selecting material enables each cell to be independently selected and programmed, increasing the array's flexibility and functionality. Additionally, a dielectric material is positioned between adjacent groups of cells to reduce interference and improve signal-to-noise ratio.

Pirovano's contributions to the semiconductor industry extend beyond his patents. He has worked for several leading companies in the field, including Micron Technology and Intel, where he has collaborated with numerous talented individuals, such as Fabio Pellizzer and Andrea Redaelli.

In conclusion, Agostino Pirovano's expertise and creativity in memory technologies have led to significant developments and advancements in the semiconductor industry. His patented inventions for self-aligned memory structures and self-selecting memory arrays offer efficient, reliable, and flexible solutions for memory design. Pirovano's dedication and ingenuity inspire us to continue pushing the boundaries of innovation and invention.