The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2024
Filed:
Oct. 13, 2020
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventor:
Agostino Pirovano, Milan, IT;
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 11/00 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01); G11C 16/24 (2006.01); G11C 29/00 (2006.01); G11C 29/52 (2006.01);
U.S. Cl.
CPC ...
G11C 29/789 (2013.01); G11C 16/08 (2013.01); G11C 16/102 (2013.01); G11C 16/24 (2013.01); G11C 29/52 (2013.01);
Abstract
Methods, systems, and devices related to 3D self-selecting-memory array of memory cells are described. The method relates to a solution for improving the fault-tolerant capability of memory devices, including: applying a triple-modular-redundancy calculation in a programming phase of the memory cells of a memory array, and adopting a sequence of two opposite dual polarity algorithms applied along a selected bit line and in parallel on the at least three selected word lines of the memory array.