The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 03, 2024

Filed:

Sep. 21, 2021
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Agostino Pirovano, Milan, IT;

Kolya Yastrebenetsky, Boise, ID (US);

Anna Maria Conti, Milan, IT;

Fabio Pellizzer, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); G11C 13/00 (2006.01); H10B 63/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10N 70/8416 (2023.02); G11C 13/0004 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); G11C 13/0097 (2013.01); H10B 63/80 (2023.02); H10N 70/011 (2023.02); H10N 70/063 (2023.02); H10N 70/231 (2023.02); H10N 70/24 (2023.02); H10N 70/826 (2023.02); H10N 70/8418 (2023.02); H10N 70/882 (2023.02); H10N 70/8822 (2023.02); H10N 70/8825 (2023.02); H10N 70/8828 (2023.02); G11C 2013/0045 (2013.01); G11C 2013/005 (2013.01); G11C 2013/0078 (2013.01); G11C 2013/009 (2013.01); G11C 2013/0092 (2013.01); G11C 2213/13 (2013.01); G11C 2213/52 (2013.01); G11C 2213/73 (2013.01);
Abstract

Methods, systems, and devices for memory cells with asymmetrical electrode interfaces are described. A memory cell with asymmetrical electrode interfaces may mitigate shorts in adjacent word lines, which may be leveraged for accurately reading a stored value of the memory cell. The memory device may include a self-selecting memory component with a top surface area in contact with a top electrode and a bottom surface area in contact with a bottom electrode, where the top surface area in contact with the top electrode is a different size than the bottom surface area in contact with the bottom electrode.


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