Anna Maria Conti

This inventor holds 44 USPTO granted patents and 20 published patent applications and 1 EPO patent, primarily in Memory Device Technology. Top assignees: Micron Technology Incorporated, Intel Corporation. Active years: 2012-2026.

USPTO Granted Patents = 44 (Patent Applications = 20)

% Patents Active = 100.0

EPO Patents = 1 (Patent Applications = 3)

Average Co-Inventor Count = 3.3

ph-index = 4

Forward Citations = 52(Granted Patents)

Location History:

Agrate Brianza, IT (2020 - 2022)
Milan, IN (2023)
Milan, IT (2012 - 2024)

Company Filing History:

39 out of 39,125

Micron Technology Incorporated

Years Active: 2012-2026

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Areas of Expertise:

Microelectronic Devices

Memory Devices

Three-Dimensional Arrays

Asymmetrical Interfaces

Write Endurance

Scribe Asymmetry

Electrode Structures

Fuse Data Storage

Access Line Formation

Tapered Cell Profile

Phase-Change Memory

Gated Devices

44 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12670956 - Self-supporting SGD stadium (2026-06-30),

2. 12640202 - Method used in forming memory circuitry comprising stairs in a stair-step region using first and second layers of imageable resist (2026-05-26),

3. 12526989 - Microelectronic devices, memory devices, and electronic systems, and methods of forming the same (2026-01-13),

4. 12525294 - Method used in forming memory circuitry having non-SGD stair-step structures individually having the collective stairs in one of its flights to have at least two different horizontal depths (2026-01-13),

5. 12500179 - Techniques for forming a device with scribe asymmetry (2025-12-16),

6. 12417807 - Microelectronic devices including staircase structures, and related memory devices, electronic systems, and methods (2025-09-16),

7. 12213325 - Techniques for manufacturing a double electrode memory array (2025-01-28),

8. 12082513 - Memory cells with asymmetrical electrode interfaces (2024-09-03),

9. 12082424 - Access line formation for a memory array (2024-09-03),

10. 11837267 - Implementations to store fuse data in memory devices (2023-12-05),

11. 11783897 - Memory cells for storing operational data (2023-10-10),

12. 11647638 - Memory device with double protective liner (2023-05-09),

13. 11574957 - Three-dimensional memory array (2023-02-07),

14. 11489117 - Self-aligned memory decks in cross-point memory arrays (2022-11-01),

15. 11417398 - Memory cells for storing operational data (2022-08-16),

Anna Maria Conti is an accomplished inventor and patent holder with over 33 patents to her name. Based in Milan, Italy, she has contributed significantly to the innovation and technology industry. Her latest patents are related to memory cells for storing operational data, and she has also developed methods, systems, and devices for creating a tapered cell profile.

The memory cells designed by Anna Maria Conti include an array of different cells for storing data, with the first set of cells devoted to operating the memory device. These cells use chalcogenide storage elements and some are programmed to store logic states while others remain unprogrammed. Sense circuitry is included in the array to determine the stored data's value.

The tapered cell profile designed by Conti is made of multiple chalcogenide materials and includes a conductive material. The etching process creates a stepped taper that is applied with a pulse, creating a mixture of the chalcogenide materials.

Anna Maria Conti has worked with several prominent companies in the technology industry, including Intel Corporation and Micron Technology. She has collaborated with fellow inventors and patent holders such as Agostino Pirovano and Andrea Redaelli.

Conti's contributions to the technology industry have made significant innovations and advancements possible. Her patents provide us with numerous solutions to improve memory storage and computer operations. We can expect her to continue making significant contributions to technological advancements through her work.