The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2026

Filed:

Aug. 12, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Umberto Maria Meotto, Dietlikon, CH;

Anna Maria Conti, Milan, IT;

Paolo Tessariol, Arcore, IT;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 41/35 (2023.01); H10B 41/20 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
H10B 41/35 (2023.02); H10B 41/20 (2023.02); H10B 43/27 (2023.02); H10B 43/10 (2023.02); H10D 62/115 (2025.01);
Abstract

A microelectronic device includes a stack structure including tiers each including insulative material and conductive material vertically adjacent the insulative material. The stack structure divided into at least two blocks separated from one another. The microelectronic device further includes at least one slot structure horizontally interposed between the at least two blocks of the stack structure. The at least one slot structure including additional insulative material and at least one contact structure extending through the additional insulative material to source tier underlying the stack structure.


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