The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2023
Filed:
May. 14, 2021
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); H01L 27/24 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/249 (2013.01); G11C 13/004 (2013.01); G11C 13/0026 (2013.01); G11C 13/0028 (2013.01); G11C 13/0069 (2013.01); H01L 27/2454 (2013.01); H01L 45/1233 (2013.01); H01L 45/144 (2013.01); H01L 45/1683 (2013.01);
Abstract
An example three-dimensional (3-D) memory array includes a first plurality of conductive lines separated from one other by an insulation material, a second plurality of conductive lines, and a plurality of pairs of conductive pillars arranged to extend substantially perpendicular to the first plurality of conductive lines and the second plurality of conductive lines. The conductive pillars of each respective pair are coupled to a same conductive line of the second plurality of conductive lines. A storage element material is formed partially around the conductive pillars of each respective pair.