The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2026

Filed:

Jul. 19, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Anna Maria Conti, Milan, IT;

Lifang Xu, Boise, ID (US);

Harsh Narendrakumar Jain, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01); H10B 43/50 (2023.01);
U.S. Cl.
CPC ...
G11C 16/0483 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02); H10B 43/50 (2023.02);
Abstract

Memory circuitry comprising strings of memory cells comprises channel-material strings of memory cells extending through insulative tiers and conductive tiers in a memory-array region. The insulative and conductive tiers extend from the memory-array region into a stair-step region. A plurality of stair-step structures is in the stair-step region. The stair-step structures individually comprise two opposing flights of stairs. The stair-step structures comprise an SGD stair-step structure and non-SGD stair-step structures. At least one of the non-SGD stair-step structures has less total stairs than are in individual of multiple others of the non-SGD stair-step structures. Other embodiments, including method, are disclosed.


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