The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2025
Filed:
Oct. 12, 2021
Micron Technology, Inc., Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Methods, systems, and devices for techniques for manufacturing a double electrode memory array are described. A memory device may be fabricated using a sequence of fabrication steps that include depositing a first stack of materials including a conductive layer, an interface layer, and a first electrode layer. The first stack of materials may be etched to form a first set of trenches. A second stack of materials may be deposited on top of the first stack of materials. The second stack may include a second electrode layer in contact with the first electrode layer, a storage layer, and a third electrode layer. The second stack of materials may be etched to form a second set of trenches above the first set of trenches, and filled with a sealing layer and a dielectric material. The sealing layer may not extend substantially into the first set of trenches.