For the Inventor, By the Inventor

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Troy, MI, United States of America

Ovonyx Inc.

USPTO Granted Patents = 262

% Expired Patents = 20.2

EPO Patents = 5

Forward Citations = 10,119

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96 inventors (with patents filed for the assignee):

Tyler A Lowrey (103 out of 326 patents)

Ward M Parkinson (34 out of 83 patents)

Wolodymyr Czubatyj (30 out of 55 patents)

4. Charles H Dennison (26 out of 290 patents)

5. Sergey A Kostylev (25 out of 40 patents)

6. Ward D Parkinson (22 out of 53 patents)

7. Guy Charles Wicker (21 out of 57 patents)

8. Stephen J Hudgens (17 out of 70 patents)

9. Claudio Resta (16 out of 35 patents)

10. Fabio Pellizzer (15 out of 292 patents)

11. Ferdinando Bedeschi (14 out of 227 patents)

12. Jon Maimon (13 out of 18 patents)

13. Patrick K Klersy (13 out of 27 patents)

14. Ilya V Karpov (11 out of 52 patents)

15. Stanford R Ovshinsky (11 out of 324 patents)

Core Competencies:

Phase Change Memory

Programmable Resistance Memory

Threshold Switch

Chalcogenide Material

Non-Volatile Memory

Data Retention

Memory Device

ECC Management

Memory Controller

Variable Resistance

Thin Film Logic

Crystalline States

262 patents: Sort by Forward Citations

1. 9876166 - Phase change memory cell and manufacturing method thereof using minitrenches (2018-01-23),

2. 9159915 - Phase change memory with threshold switch select device (2015-10-13),

3. 9076521 - Method and apparatus for decoding memory (2015-07-07),

4. 9036409 - Immunity of phase change material to disturb in the amorphous phase (2015-05-19),

5. 9000408 - Memory device with low reset current (2015-04-07),

6. 8908413 - Programmable resistance memory (2014-12-09),

7. 8861293 - Immunity of phase change material to disturb in the amorphous phase (2014-10-14),

8. 8796101 - Memory device (2014-08-05),

9. 8792270 - Programmable resistance memory (2014-07-29),

10. 8773941 - Method and apparatus for decoding memory (2014-07-08),

11. 8767440 - Sector array addressing for ECC management (2014-07-01),

12. 8755216 - Programmable resistance memory with feedback control (2014-06-17),

13. 8716056 - Method for forming chalcogenide switch with crystallized thin film diode isolation (2014-05-06),

14. 8705306 - Method for using a bit specific reference level to read a phase change memory (2014-04-22),

15. 8699267 - Semiconductor phase change memory using face center cubic crystalline phase change material (2014-04-15),

Company Overview

Ovonyx Inc., based in Troy, Michigan, specializes in the development of advanced memory technologies, particularly in the realm of phase change memory (PCM). The company focuses on innovative solutions that enhance data retention and performance in non-volatile memory applications. Key areas of research include programmable resistance memory, threshold switches, and the utilization of chalcogenide materials. Ovonyx aims to address the growing demand for efficient memory devices through its cutting-edge technologies and expertise in ECC management.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 20 2026

262 Patents

#6 in Troy, MI

#74 in Michigan

#1,654 in US

#3,349 in the World

Troy, MI, United States of America

Ovonyx Inc.

Forward Citations = 10,119

96 inventors:

Tyler A Lowrey (103 out of 326 patents)

Ward M Parkinson (34 out of 83 patents)

Wolodymyr Czubatyj (30 out of 55 patents)

4. Charles H Dennison (26 out of 290 patents)

5. Sergey A Kostylev (25 out of 40 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Ovonyx Inc.. Retrieved from https://idiyas.com/company/ovonyx

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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