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Boise, ID, United States of America

Ovonyx Inc.

USPTO Granted Patents = 262

EPO Patents = 5

Forward Citations = 10,104

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96 inventors (with patents filed for the assignee):

Tyler A Lowrey (103 out of 326 patents)

Ward M Parkinson (34 out of 81 patents)

Wolodymyr Czubatyj (30 out of 55 patents)

4. Charles H Dennison (26 out of 290 patents)

5. Sergey A Kostylev (25 out of 40 patents)

6. Ward D Parkinson (22 out of 53 patents)

7. Guy Charles Wicker (21 out of 57 patents)

8. Stephen J Hudgens (17 out of 70 patents)

9. Claudio Resta (16 out of 35 patents)

10. Fabio Pellizzer (15 out of 289 patents)

11. Ferdinando Bedeschi (14 out of 217 patents)

12. Jon Maimon (13 out of 18 patents)

13. Patrick K Klersy (13 out of 27 patents)

14. Ilya V Karpov (11 out of 49 patents)

15. Stanford R Ovshinsky (11 out of 324 patents)

Core Competencies:

Phase Change Memory

Programmable Resistance Memory

Threshold Switch Select Device

Memory Device

Chalcogenide Material

Non-Volatile Memory

ECC Management

Variable Resistance Materials

Memory Controller

Crystalline Programming States

Amorphous Phase Immunity

High Volume Memory

262 patents: Sort by Forward Citations

1. 9876166 - Phase change memory cell and manufacturing method thereof using minitrenches (2018-01-23),

2. 9159915 - Phase change memory with threshold switch select device (2015-10-13),

3. 9076521 - Method and apparatus for decoding memory (2015-07-07),

4. 9036409 - Immunity of phase change material to disturb in the amorphous phase (2015-05-19),

5. 9000408 - Memory device with low reset current (2015-04-07),

6. 8908413 - Programmable resistance memory (2014-12-09),

7. 8861293 - Immunity of phase change material to disturb in the amorphous phase (2014-10-14),

8. 8796101 - Memory device (2014-08-05),

9. 8792270 - Programmable resistance memory (2014-07-29),

10. 8773941 - Method and apparatus for decoding memory (2014-07-08),

11. 8767440 - Sector array addressing for ECC management (2014-07-01),

12. 8755216 - Programmable resistance memory with feedback control (2014-06-17),

13. 8716056 - Method for forming chalcogenide switch with crystallized thin film diode isolation (2014-05-06),

14. 8705306 - Method for using a bit specific reference level to read a phase change memory (2014-04-22),

15. 8699267 - Semiconductor phase change memory using face center cubic crystalline phase change material (2014-04-15),

Ovonyx Inc. is a leading provider of advanced phase-change memory solutions. Our groundbreaking memory technology enables faster data transfer rates, higher density storage, and lower power consumption. With a focus on innovation, Ovonyx strives to deliver cutting-edge products that revolutionize the semiconductor industry.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Jan 20 2026

262 Patents

#3 in Boise, ID

#4 in Idaho

#1,577 in US

#3,238 in the World

Boise, ID, United States of America

Ovonyx Inc.

Forward Citations = 10,104

96 inventors:

Tyler A Lowrey (103 out of 326 patents)

Ward M Parkinson (34 out of 81 patents)

Wolodymyr Czubatyj (30 out of 55 patents)

4. Charles H Dennison (26 out of 290 patents)

5. Sergey A Kostylev (25 out of 40 patents)

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