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For the Inventor, By the Inventor

Boise, ID, United States of America

Ovonyx Inc.


USPTO Granted Patents = 262


Forward Citations = 10,104

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96 inventors (with patents filed for the assignee):

goldMedal Tyler A Lowrey (103 out of 326 patents)

silverMedal Ward M Parkinson (34 out of 80 patents)

bronzeMedal Wolodymyr Czubatyj (30 out of 55 patents)

4.  Charles H Dennison (26 out of 290 patents)

5.  Sergey A Kostylev (25 out of 40 patents)

6.  Ward D Parkinson (22 out of 53 patents)

7.  Guy Charles Wicker (21 out of 57 patents)

8.  Stephen J Hudgens (17 out of 70 patents)

9.  Claudio Resta (16 out of 35 patents)

10.  Fabio Pellizzer (15 out of 289 patents)

11.  Ferdinando Bedeschi (14 out of 216 patents)

12.  Jon Maimon (13 out of 18 patents)

13.  Patrick K Klersy (13 out of 27 patents)

14.  Ilya V Karpov (11 out of 49 patents)

15.  Stanford R Ovshinsky (11 out of 324 patents)


Core Competencies:
Phase Change Memory
Programmable Resistance Memory
Threshold Switch Select Device
Memory Device
Chalcogenide Material
Non-Volatile Memory
ECC Management
Variable Resistance Materials
Memory Controller
Crystalline Programming States
Amorphous Phase Immunity
High Volume Memory

262 patents:

1. 9876166 - Phase change memory cell and manufacturing method thereof using minitrenches (2018-01-23),
2. 9159915 - Phase change memory with threshold switch select device (2015-10-13),
3. 9076521 - Method and apparatus for decoding memory (2015-07-07),
4. 9036409 - Immunity of phase change material to disturb in the amorphous phase (2015-05-19),
5. 9000408 - Memory device with low reset current (2015-04-07),
6. 8908413 - Programmable resistance memory (2014-12-09),
7. 8861293 - Immunity of phase change material to disturb in the amorphous phase (2014-10-14),
8. 8796101 - Memory device (2014-08-05),
9. 8792270 - Programmable resistance memory (2014-07-29),
10. 8773941 - Method and apparatus for decoding memory (2014-07-08),
11. 8767440 - Sector array addressing for ECC management (2014-07-01),
12. 8755216 - Programmable resistance memory with feedback control (2014-06-17),
13. 8716056 - Method for forming chalcogenide switch with crystallized thin film diode isolation (2014-05-06),
14. 8705306 - Method for using a bit specific reference level to read a phase change memory (2014-04-22),
15. 8699267 - Semiconductor phase change memory using face center cubic crystalline phase change material (2014-04-15),
Ovonyx Inc. is a leading provider of advanced phase-change memory solutions. Our groundbreaking memory technology enables faster data transfer rates, higher density storage, and lower power consumption. With a focus on innovation, Ovonyx strives to deliver cutting-edge products that revolutionize the semiconductor industry.
This text is generated by artificial intelligence and may not be accurate.

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USPTO Data Jan 1 1976 - Dec 30 2025

262 Patents

#3 in Boise, ID

#4 in Idaho

#1,576 in US

#3,232 in the World

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Boise, ID, United States of America

Ovonyx Inc.

Forward Citations = 10,104

96 inventors:

goldMedal Tyler A Lowrey (103 out of 326 patents)

silverMedal Ward M Parkinson (34 out of 80 patents)

bronzeMedal Wolodymyr Czubatyj (30 out of 55 patents)

4.  Charles H Dennison (26 out of 290 patents)

5.  Sergey A Kostylev (25 out of 40 patents)

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