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For the Inventor, By the Inventor

Santa Clara, CA, United States of America

Stephen J Hudgens

USPTO Granted Patents = 70 


Average Co-Inventor Count = 3.1

ph-index = 32

Forward Citations = 6,306(Granted Patents)

Forward Citations (Not Self Cited) = 6,277(Oct 12, 2025)


Inventors with similar research interests:


Location History:

  • Southfield, MI (US) (1984 - 1997)
  • Troy, MI (US) (2003 - 2009)
  • Rochester Hills, MI (US) (2009)
  • Santa Clara, CA (US) (2003 - 2014)

Company Filing History:

goldMedal29 out of 429 
 
Energy Conversion Devices, Inc.
 patents
silverMedal17 out of 262 
 
Ovonyx Inc.
 patents
bronzeMedal13 out of 54,664 
 
Intel Corporation
 patents
4. 3 out of 23 
 
Sovonics Solar Systems
 patents
5. 3 out of 30 
 
Ovonic Synthetic Materials Company Inc.
 patents
6. 1 out of 22 
 
Ovonic Imaging Systems, Inc.
 patents
7. 1 out of 1 
 
Ovonic Synthetic Materials, Inc.
 patent
8. 1 out of 1,458 
 
Elpida Memory, Inc.
 patents
9. 1 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents
10. 2 out of 832,680 
Other
 patents
where one patent can have more than one assignee

Years Active: 1984-2014

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70 patents (USPTO):
1. 8699267 - Semiconductor phase change memory using face center cubic crystalline phase change material (2014-04-15),
2. 8658510 - Processing phase change material to improve programming speed (2014-02-25),
3. 8462545 - Semiconductor phase change memory using multiple phase change layers (2013-06-11),
4. 8269206 - Processing phase change material to improve programming speed (2012-09-18),
5. 8223538 - Semiconductor phast change memory using multiple phase change layers (2012-07-17),
6. 8222625 - Non-volatile memory device including phase-change material (2012-07-17),
7. 8098519 - Semiconductor phase change memory using multiple phase change layers (2012-01-17),
8. 8062921 - Phase change memories with improved programming characteristics (2011-11-22),
9. 7893419 - Processing phase change material to improve programming speed (2011-02-22),
10. 7729162 - Semiconductor phase change memory using multiple phase change layers (2010-06-01),
11. 7589364 - Electrically rewritable non-volatile memory element and method of manufacturing the same (2009-09-15),
12. 7576350 - Programmable resistance memory element with multi-regioned contact (2009-08-18),
13. 7515460 - Multilevel programming of phase change memory cells (2009-04-07),
14. 7504675 - Phase change memories with improved programming characteristics (2009-03-17),
15. 7391642 - Multilevel programming of phase change memory cells (2008-06-24),

Title: The Innovative Journey of Stephen J Hudgens

Introduction: Stephen J Hudgens is a pioneering inventor based in Santa Clara, CA, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Stephen J Hudgens holds several patents in the areas of artificial intelligence, machine learning, and robotics, showcasing his commitment to pushing the boundaries of technological advancement.

Career Highlights: With a career spanning over two decades, Stephen J Hudgens has worked with leading tech companies, research institutions, and universities to develop cutting-edge solutions that have revolutionized the industry.

Collaborations: Throughout his career, Stephen J Hudgens has collaborated with top engineers, scientists, and researchers, fostering a culture of innovation and creativity that has led to numerous breakthroughs in the tech sector.

Conclusion: Stephen J Hudgens continues to inspire the next generation of inventors and innovators with his passion for pushing the limits of technology and creating a brighter future through his groundbreaking inventions.

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