The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2012
Filed:
Jan. 26, 2010
Dong-ho Ahn, Suwon-si, KR;
Hideki Horii, Seoul, KR;
Soon-oh Park, Suwon-si, KR;
Young-hyun Kim, Seoul, KR;
Hee-ju Shin, Yongin-si, KR;
Jin-ho OH, Seongnam-si, KR;
Carl H. Schell, Waterford, MI (US);
Jonathan D. Maimon, Manassas, VA (US);
Stephen J. Hudgens, Santa Clara, CA (US);
Dong-ho Ahn, Suwon-si, KR;
Hideki Horii, Seoul, KR;
Soon-oh Park, Suwon-si, KR;
Young-hyun Kim, Seoul, KR;
Hee-ju Shin, Yongin-si, KR;
Jin-ho Oh, Seongnam-si, KR;
Carl H. Schell, Waterford, MI (US);
Jonathan D. Maimon, Manassas, VA (US);
Stephen J. Hudgens, Santa Clara, CA (US);
Samsung Electronics Co., Ltd., , KR;
Ovonyx, Inc., Rochester Hills, MI (US);
Abstract
A non-volatile memory device including a phase-change material, which has a low operating voltage and low power consumption, includes a lower electrode; a phase-change material layer formed on the lower electrode so as to be electrically connected to the lower electrode, wherein the phase-change material layer includes a phase-change material having a composition represented by SnSbTeor, alternatively with substitutions, in whole or in part, of silicon and/or indium for tin, arsenic and/or bismuth for antimony, and selenium for tellurium; and an upper electrode formed on the phase-change material layer so as to be electrically connected to the phase-change material layer. Here, 0.001≦X≦0.3, 0.001≦Y≦0.8, 0.1≦Z≦0.8, and X+Y+Z=1.