Dong-ho Ahn

This inventor holds 16 USPTO granted patents and 1 published patent application. Top assignees: Samsung Electronics Co., Ltd., Ovonyx Inc.. Active years: 1997-2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dong-ho Ahn. Retrieved from https://idiyas.com/inventor/dong-ho-ahn-57r2a8ve

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 16 (Patent Applications = 1)

% Patents Active = 93.8

Average Co-Inventor Count = 3.6

ph-index = 7

Forward Citations = 175(Granted Patents)

Location History:

Ansan, KR (1997)
Suwon, KR (2000)
Kyungki-do, KR (1998 - 2004)
Suwon-si, KR (2009 - 2012)

Company Filing History:

16 out of 132,108

Samsung Electronics Co., Ltd.

where one patent can have more than one assignee

Years Active: 1997-2012

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16 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8299450 - Non-volatile memory device including phase-change material (2012-10-30),

2. 8222625 - Non-volatile memory device including phase-change material (2012-07-17),

3. 8187918 - Methods of forming multi-level cell of semiconductor memory (2012-05-29),

4. 8021977 - Methods of forming contact structures and semiconductor devices fabricated using contact structures (2011-09-20),

5. 7800095 - Phase-change memory device having phase change material pattern shared between adjacent cells and electronic product including the phase-change memory (2010-09-21),

6. 7767568 - Phase change memory device and method of fabricating the same (2010-08-03),

7. 7638788 - Phase change memory device and method of forming the same (2009-12-29),

8. 6717231 - Trench isolation regions having recess-inhibiting layers therein that protect against overetching (2004-04-06),

9. 6461937 - Methods of forming trench isolation regions having recess-inhibiting layers therein that protect against overetching (2002-10-08),

10. 6383877 - Method of forming T-shaped isolation layer, method of forming elevated salicide source/drain region using the same, and semiconductor device having T-shaped isolation layer (2002-05-07),

11. 6159823 - Trench isolation method of semiconductor device (2000-12-12),

12. 6093622 - Isolation method of semiconductor device using second pad oxide layer (2000-07-25),

13. 5926721 - Isolation method for semiconductor device using selective epitaxial (1999-07-20),

14. 5837595 - Methods of forming field oxide isolation regions with reduced (1998-11-17),

15. 5804491 - Combined field/trench isolation region fabrication methods (1998-09-08),

Title: Dong-ho Ahn: Pioneering Inventor from Suwon-si, KR

Introduction: Dong-ho Ahn is a distinguished inventor hailing from Suwon-si, South Korea, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Dong-ho Ahn holds several patents in the realm of electronics and telecommunications, showcasing his expertise and innovative mindset in developing cutting-edge solutions for modern challenges.

Career Highlights: With a career spanning over two decades, Dong-ho Ahn has worked tirelessly to push the boundaries of technological advancements, with a focus on enhancing connectivity and efficiency in various industries.

Collaborations: Throughout his career, Dong-ho Ahn has collaborated with leading tech companies and research institutions, fostering a culture of innovation and knowledge-sharing to drive progress in the field of technology.

Conclusion: Dong-ho Ahn's passion for innovation and his relentless pursuit of excellence have solidified his position as a trailblazer in the world of inventions, inspiring future generations to continue pushing the boundaries of what is possible in the realm of technology.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

1 patent pending: