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For the Inventor, By the Inventor

Suwon-si, South Korea

Dong-ho Ahn

USPTO Granted Patents = 16 

Average Co-Inventor Count = 3.6

ph-index = 7

Forward Citations = 175(Granted Patents)


Location History:

  • Ansan, KR (1997)
  • Suwon, KR (2000)
  • Kyungki-do, KR (1998 - 2004)
  • Suwon-si, KR (2009 - 2012)

Company Filing History:

goldMedal16 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents
silverMedal1 out of 262 
 
Ovonyx Inc.
 patents
where one patent can have more than one assignee

Years Active: 1997-2012

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16 patents (USPTO):Explore Patents
1. 8299450 - Non-volatile memory device including phase-change material (2012-10-30),
2. 8222625 - Non-volatile memory device including phase-change material (2012-07-17),
3. 8187918 - Methods of forming multi-level cell of semiconductor memory (2012-05-29),
4. 8021977 - Methods of forming contact structures and semiconductor devices fabricated using contact structures (2011-09-20),
5. 7800095 - Phase-change memory device having phase change material pattern shared between adjacent cells and electronic product including the phase-change memory (2010-09-21),
6. 7767568 - Phase change memory device and method of fabricating the same (2010-08-03),
7. 7638788 - Phase change memory device and method of forming the same (2009-12-29),
8. 6717231 - Trench isolation regions having recess-inhibiting layers therein that protect against overetching (2004-04-06),
9. 6461937 - Methods of forming trench isolation regions having recess-inhibiting layers therein that protect against overetching (2002-10-08),
10. 6383877 - Method of forming T-shaped isolation layer, method of forming elevated salicide source/drain region using the same, and semiconductor device having T-shaped isolation layer (2002-05-07),
11. 6159823 - Trench isolation method of semiconductor device (2000-12-12),
12. 6093622 - Isolation method of semiconductor device using second pad oxide layer (2000-07-25),
13. 5926721 - Isolation method for semiconductor device using selective epitaxial (1999-07-20),
14. 5837595 - Methods of forming field oxide isolation regions with reduced (1998-11-17),
15. 5804491 - Combined field/trench isolation region fabrication methods (1998-09-08),

Title: Dong-ho Ahn: Pioneering Inventor from Suwon-si, KR

Introduction: Dong-ho Ahn is a distinguished inventor hailing from Suwon-si, South Korea, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Dong-ho Ahn holds several patents in the realm of electronics and telecommunications, showcasing his expertise and innovative mindset in developing cutting-edge solutions for modern challenges.

Career Highlights: With a career spanning over two decades, Dong-ho Ahn has worked tirelessly to push the boundaries of technological advancements, with a focus on enhancing connectivity and efficiency in various industries.

Collaborations: Throughout his career, Dong-ho Ahn has collaborated with leading tech companies and research institutions, fostering a culture of innovation and knowledge-sharing to drive progress in the field of technology.

Conclusion: Dong-ho Ahn's passion for innovation and his relentless pursuit of excellence have solidified his position as a trailblazer in the world of inventions, inspiring future generations to continue pushing the boundaries of what is possible in the realm of technology.

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