The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 1999
Filed:
Aug. 21, 1997
Applicant:
Inventors:
Sug-hun Hong, Seoul, KR;
Dong-ho Ahn, Kyungki-do, KR;
Assignee:
Samsung Electronics, Co., Ltd., Suwon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438413 ; 438422 ;
Abstract
An isolation method for a highly-integrated semiconductor device includes growing an epitaxial layer on the entire surface of a semiconductor substrate including over a trench on which an oxide layer is formed, thereby leaving the inside of the trench empty. A portion of the epitaxial layer which is located over the trench is then oxidized to form an isolation region.
Hong, Sug-hun. (1999). Isolation method for semiconductor device using selective epitaxial (U.S. Patent No. 5926721). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5926721
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile