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For the Inventor, By the Inventor

Suwon, South Korea

Sug-hun Hong

USPTO Granted Patents = 13

Average Co-Inventor Count = 1.9

ph-index = 7

Forward Citations = 147(Granted Patents)


Location History:

  • Suwon, KR (2002 - 2003)
  • Kyungki-do, KR (2002 - 2006)
  • Seoul, KR (1999 - 2008)
  • Gyeonggi-do, KR (2005 - 2012)

Company Filing History:

goldMedal13 out of 131,744 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 1999-2012

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13 patents (USPTO):Explore Patents
1. 8293599 - Methods of forming semiconductor devices having gates with different work functions using selective injection of diffusion inhibiting materials (2012-10-23),
2. 7910421 - Methods of forming devices including different gate insulating layers on PMOS/NMOS regions (2011-03-22),
3. 7319062 - Trench isolation method with an epitaxially grown capping layer (2008-01-15),
4. 7053006 - Methods of fabricating oxide layers by plasma nitridation and oxidation (2006-05-30),
5. 6930062 - Methods of forming an oxide layer in a transistor having a recessed gate (2005-08-16),
6. 6642596 - Semiconductor device having trench isolation structure and method of forming same (2003-11-04),
7. 6624496 - Method of forming T-shaped isolation layer, method of forming elevated salicide source/drain region using the same, and semiconductor device having T-shaped isolation layer (2003-09-23),
8. 6501149 - Semiconductor device having trench isolation structure and method of forming same (2002-12-31),
9. 6383877 - Method of forming T-shaped isolation layer, method of forming elevated salicide source/drain region using the same, and semiconductor device having T-shaped isolation layer (2002-05-07),
10. 6255194 - Trench isolation method (2001-07-03),
11. 6037237 - Trench isolation methods utilizing composite oxide films (2000-03-14),
12. 5926721 - Isolation method for semiconductor device using selective epitaxial (1999-07-20),
13. 5903040 - Trench isolated integrated circuits including voids (1999-05-11),

Title: Sug-hun Hong: Innovator in Semiconductor Technology

Introduction

Sug-hun Hong is a prominent inventor based in Suwon, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 13 patents. His work focuses on innovative methods for forming semiconductor devices, particularly in optimizing gate structures.

Latest Patents

One of Sug-hun Hong's latest patents is titled "Methods of forming semiconductor devices having gates with different work functions using selective injection of diffusion inhibiting materials." This invention describes a process for creating a semiconductor device with dual gates that possess different work functions. The method involves forming a gate insulating layer on a semiconductor substrate and selectively injecting a diffusion inhibiting material into one region. This allows for the controlled diffusion of a work function controlling material, resulting in gates with distinct electrical characteristics.

Another notable patent is "Methods of forming devices including different gate insulating layers on PMOS/NMOS regions." This patent outlines a technique for manufacturing CMOS devices where the thickness of the gate insulating layer can be precisely controlled. By selectively injecting fluorine into specific regions of the substrate, the method enables the formation of gate insulating layers with varying thicknesses, enhancing device performance.

Career Highlights

Sug-hun Hong is currently employed at Samsung Electronics Co., Ltd., a leading global technology company. His work at Samsung has positioned him as a key player in advancing semiconductor technology. His innovative approaches have contributed to the development of more efficient and effective semiconductor devices.

Collaborations

Sug-hun Hong has collaborated with notable colleagues, including Sang-jin Hyun and Yu-gyun Shin. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and expertise in semiconductor research and development.

Conclusion

Sug-hun Hong's contributions to semiconductor technology through his patents and work at Samsung Electronics Co., Ltd. highlight his role as an influential inventor in the field. His innovative methods continue to shape the future of semiconductor devices, making significant strides in technology advancement.

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