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For the Inventor, By the Inventor

Suwon, South Korea

Sug-hun Hong

USPTO Granted Patents = 13

Average Co-Inventor Count = 1.9

ph-index = 7

Forward Citations = 147(Granted Patents)


Location History:

  • Suwon, KR (2002 - 2003)
  • Kyungki-do, KR (2002 - 2006)
  • Seoul, KR (1999 - 2008)
  • Gyeonggi-do, KR (2005 - 2012)

Company Filing History:

goldMedal13 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 1999-2012

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13 patents (USPTO):Explore Patents
1. 8293599 - Methods of forming semiconductor devices having gates with different work functions using selective injection of diffusion inhibiting materials (2012-10-23),
2. 7910421 - Methods of forming devices including different gate insulating layers on PMOS/NMOS regions (2011-03-22),
3. 7319062 - Trench isolation method with an epitaxially grown capping layer (2008-01-15),
4. 7053006 - Methods of fabricating oxide layers by plasma nitridation and oxidation (2006-05-30),
5. 6930062 - Methods of forming an oxide layer in a transistor having a recessed gate (2005-08-16),
6. 6642596 - Semiconductor device having trench isolation structure and method of forming same (2003-11-04),
7. 6624496 - Method of forming T-shaped isolation layer, method of forming elevated salicide source/drain region using the same, and semiconductor device having T-shaped isolation layer (2003-09-23),
8. 6501149 - Semiconductor device having trench isolation structure and method of forming same (2002-12-31),
9. 6383877 - Method of forming T-shaped isolation layer, method of forming elevated salicide source/drain region using the same, and semiconductor device having T-shaped isolation layer (2002-05-07),
10. 6255194 - Trench isolation method (2001-07-03),
11. 6037237 - Trench isolation methods utilizing composite oxide films (2000-03-14),
12. 5926721 - Isolation method for semiconductor device using selective epitaxial (1999-07-20),
13. 5903040 - Trench isolated integrated circuits including voids (1999-05-11),
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