The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2005
Filed:
May. 21, 2004
Sang-jin Hyun, Gyeonggi-do, KR;
Yu-gyun Shin, Gyeonggi-do, KR;
Bon-young Koo, Gyeonggi-do, KR;
Sug-hun Hong, Gyeonggi-do, KR;
Taek-soo Jeon, Gyeonggi-do, KR;
Jeong-do Ryu, Gyeonggi-do, KR;
Sang-Jin Hyun, Gyeonggi-do, KR;
Yu-Gyun Shin, Gyeonggi-do, KR;
Bon-Young Koo, Gyeonggi-do, KR;
Sug-Hun Hong, Gyeonggi-do, KR;
Taek-Soo Jeon, Gyeonggi-do, KR;
Jeong-do Ryu, Gyeonggi-do, KR;
Samsung Electronics Co., Inc., Kyungki-Do, KR;
Abstract
A method of forming an oxide layer on a semiconductor substrate includes thermally oxidizing a surface of the substrate to form an oxide layer on the substrate, and then exposing the oxide layer to an ambient including predominantly oxygen radicals to thereby thicken the oxide layer. Related methods of fabricating a recessed gate transistor are also discussed.