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For the Inventor, By the Inventor

Seongnam-si, South Korea

Yu-Gyun Shin

USPTO Granted Patents = 52 

Average Co-Inventor Count = 4.6

ph-index = 8

Forward Citations = 273(Granted Patents)

Forward Citations (Not Self Cited) = 269(Oct 12, 2025)


Inventors with similar research interests:


Location History:

  • Gyeonggi-do, KR (2005 - 2015)
  • Seongnam-si, KR (2008 - 2017)

Company Filing History:

goldMedal52 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2005-2017

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52 patents (USPTO):
1. 9543300 - CMOS transistor, semiconductor device including the transistor, and semiconductor module including the device (2017-01-10),
2. 9287199 - CMOS transistor, semiconductor device including the transistor, and semiconductor module including the device (2016-03-15),
3. 9236313 - Method of fabricating semiconductor device having dual gate (2016-01-12),
4. 9190495 - Recessed channel array transistors, and semiconductor devices including a recessed channel array transistor (2015-11-17),
5. 8932922 - Method of fabricating semiconductor device having dual gate (2015-01-13),
6. 8691649 - Methods of forming recessed channel array transistors and methods of manufacturing semiconductor devices (2014-04-08),
7. 8691642 - Method of fabricating semiconductor device including forming epitaxial blocking layers by nitridation process (2014-04-08),
8. 8604551 - Semiconductor device including trenches having particular structures (2013-12-10),
9. 8598024 - Fabricating method of metal silicide layer, fabricating method of semiconductor device using the same and semiconductor device fabricated using the method (2013-12-03),
10. 8530303 - Method of fabricating semiconductor device (2013-09-10),
11. 8501611 - Methods of forming integrated circuit devices having electrically conductive layers therein with partially nitridated sidewalls (2013-08-06),
12. 8481416 - Semiconductor devices having contact plugs with stress buffer spacers and methods of fabricating the same (2013-07-09),
13. 8470703 - Semiconductor device and method of fabricating the same (2013-06-25),
14. 8415224 - Method of fabricating a semiconductor device including forming trenches having particular structures (2013-04-09),
15. 8361860 - Method of manufacturing semiconductor device (2013-01-29),

Title: The Innovations of Yu-Gyun Shin: A Semiconductor Pioneer

Introduction: Yu-Gyun Shin is a prominent inventor based in Seongnam-si, Korea, known for his remarkable contributions to the field of semiconductor technology. With an impressive portfolio of 52 patents, he has made significant advancements that have influenced modern electronics.

Latest Patents: Yu-Gyun Shin's recent work includes pivotal patents focusing on CMOS transistors, semiconductor devices that incorporate these transistors, and semiconductor modules featuring these devices. His innovations detail a CMOS transistor consisting of first and second interconnection structures strategically placed in different regions of a semiconductor substrate, each exhibiting varying conductivity types. This design facilitates the creation of a semiconductor device and module that enhances performance and efficiency in semiconductor applications.

Career Highlights: Throughout his career, Yu-Gyun Shin has worked with renowned organizations such as Samsung Electronics Co., Ltd. His expertise in semiconductor technology has positioned him as a key innovator within the industry, pushing the boundaries of what is possible in electronic devices.

Collaborations: Collaborating with notable colleagues like Jong-Wook Lee and Yong-Hoon Son, Yu-Gyun Shin has fostered a rich environment for innovation. Together, they have worked to advance the field of semiconductor technology, ensuring that their contributions have a lasting impact.

Conclusion: Yu-Gyun Shin's dedication to innovation in the semiconductor sector is shaping the future of electronics. With his extensive patent portfolio and collaborations with leading industry experts, he continues to pave the way for groundbreaking technological advancements.

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