The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2013
Filed:
Sep. 22, 2011
Jin-bum Kim, Seoul, KR;
Chul-sung Kim, Seongnam-si, KR;
Sang-woo Lee, Seoul, KR;
Yu-gyun Shin, Seongnam-si, KR;
Jin-Bum Kim, Seoul, KR;
Chul-Sung Kim, Seongnam-si, KR;
Sang-Woo Lee, Seoul, KR;
Yu-Gyun Shin, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of fabricating a metal silicide layer includes forming a metal layer on a substrate, and forming a pre-metal silicide layer by reacting the substrate with the metal layer by performing a first annealing process on the substrate. The method also includes implanting silicon into the substrate using a gas cluster ion beam (GCIB) process, and changing the pre-metal silicide layer into a metal silicide layer by performing a second annealing process on the substrate.