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H01L 27/06 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/28 (2006.01); H01L 27/105 (2006.01); H01L 27/108 (2006.01); H01L 27/11 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 21/336 (2006.01); H01L 21/8234 (2006.01);

U.S. Cl.

CPC ...

H01L 29/66795 (2013.01); H01L 21/28211 (2013.01); H01L 27/105 (2013.01); H01L 27/10876 (2013.01); H01L 27/10879 (2013.01); H01L 27/10894 (2013.01); H01L 27/11 (2013.01); H01L 29/4236 (2013.01); H01L 29/51 (2013.01); H01L 29/66621 (2013.01); H01L 29/7851 (2013.01); H01L 21/823412 (2013.01);

Abstract

A recessed channel array transistor may include a substrate, a gate oxide layer, a gate electrode and source/drain regions. The substrate may have an active region and an isolation region. A recess may be formed in the active region. The gate oxide layer may be formed on the recess and the substrate. The gate oxide layer may include a first portion on an intersection between a side end of the recess and a sidewall of the active region and a second portion on a side surface of the recess. The first portion may include a thickness greater than about 70% of a thickness of the second portion. The gate electrode may be formed on the gate oxide layer. The source/drain regions may be formed in the substrate. Thus, the recessed channel array transistor may have a decreased leakage current and an increased on-current.

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