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For the Inventor, By the Inventor

Seoul, South Korea

Jong-Hoon Kang

USPTO Granted Patents = 10 

Average Co-Inventor Count = 6.3

ph-index = 3

Forward Citations = 13(Granted Patents)


Location History:

  • Suwon-si, KR (2011 - 2014)
  • Gyeonggi-do, KR (2012 - 2015)
  • Seoul, KR (2013 - 2016)

Company Filing History:

goldMedal10 out of 131,611 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2011-2016

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10 patents (USPTO):Explore Patents
1. 9240357 - Method of fabricating semiconductor device having preliminary stacked structure with offset oxide etched using gas cluster ion (2016-01-19),
2. 9236259 - Method of manufacturing semiconductor device having doped layer (2016-01-12),
3. 9190495 - Recessed channel array transistors, and semiconductor devices including a recessed channel array transistor (2015-11-17),
4. 8883608 - Methods of manufacturing a semiconductor device (2014-11-11),
5. 8854614 - Methods of thermally treating a semiconductor wafer (2014-10-07),
6. 8691649 - Methods of forming recessed channel array transistors and methods of manufacturing semiconductor devices (2014-04-08),
7. 8501611 - Methods of forming integrated circuit devices having electrically conductive layers therein with partially nitridated sidewalls (2013-08-06),
8. 8492251 - Method of forming a thin layer structure (2013-07-23),
9. 8252681 - Methods of forming integrated circuit devices having electrically conductive layers therein with partially nitridated sidewalls (2012-08-28),
10. 7968442 - Fin field effect transistor and method of fabricating the same (2011-06-28),

Title: Jong-Hoon Kang: Innovator in Semiconductor Technology

Introduction

Jong-Hoon Kang is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 10 patents. His innovative approaches have paved the way for advancements in semiconductor device fabrication.

Latest Patents

One of his latest patents is a method of fabricating a semiconductor device having a preliminary stacked structure with offset oxide etched using gas cluster ion. This method involves forming a preliminary stack structure that defines a through hole, followed by the creation of a protection layer and a dielectric layer within that hole. The process includes forming a channel pattern, a gapfill pattern, and a contact pattern, as well as measuring the thickness of the offset oxide and scanning it using a reactive gas cluster ion beam. The scanning process is optimized based on the measured thickness data.

Another notable patent is a method of manufacturing a semiconductor device that includes a doped layer. This method entails providing a substrate with distinct regions, forming a gate dielectric layer, and subsequently creating a series of layers including a first gate electrode layer and a first doped layer. The process also involves forming a mask pattern and removing specific layers to create a second doped layer on the substrate.

Career Highlights

Jong-Hoon Kang is currently employed at Samsung Electronics Co., Ltd., where he continues to innovate in semiconductor technology. His work has been instrumental in enhancing the efficiency and performance of semiconductor devices.

Collaborations

He has collaborated with notable colleagues such as Tai-Su Park and Dong-Chan Kim, contributing to various projects that advance semiconductor technology.

Conclusion

Jong-Hoon Kang's contributions to semiconductor technology through his patents and work at Samsung Electronics Co., Ltd. highlight his role as a leading inventor in the field. His innovative methods are shaping the future of semiconductor device fabrication.

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