The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2011
Filed:
Jul. 06, 2009
Jong-hoon Kang, Suwon-si, KR;
Tai-su Park, Seoul, KR;
Dong-chan Kim, Seoul, KR;
Yu-gyun Shin, Seongnam-si, KR;
Jeong-do Ryu, Seoul, KR;
Seong-hoon Jeong, Masan-si, KR;
Jong-hoon Kang, Suwon-si, KR;
Tai-su Park, Seoul, KR;
Dong-chan Kim, Seoul, KR;
Yu-gyun Shin, Seongnam-si, KR;
Jeong-do Ryu, Seoul, KR;
Seong-hoon Jeong, Masan-si, KR;
Abstract
A fin field effect transistor includes a fin protruding from a semiconductor substrate, a gate insulating layer formed so as to cover upper and lateral surfaces of the fin, and a gate electrode formed across the fin so as to cover the gate insulating layer. An upper edge of the fin is rounded so that an electric field concentratedly applied to the upper edge of the fin through the gate electrode is dispersed. A thickness of a portion of the gate insulating layer formed on an upper surface of the fin is greater than a thickness of a portion of the gate insulating layer formed on a lateral surface of the fin, in order to reduce an electric field applied through the gate electrode.