The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2014

Filed:

Dec. 14, 2012
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jong-Hoon Kang, Seoul, KR;

Taegon Kim, Seoul, KR;

Hanmei Choi, Seoul, KR;

Eunyoung Jo, Seoul, KR;

Gonsu Kang, Hwaseong-si, KR;

Sungho Kang, Hwaseong-si, KR;

Sungho Heo, Suwon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 21/00 (2006.01); H01L 21/66 (2006.01); H01L 21/68 (2006.01); H01L 21/324 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/324 (2013.01); H01L 22/12 (2013.01); H01L 21/681 (2013.01); H01L 22/10 (2013.01); H01L 21/67115 (2013.01); H01L 21/67288 (2013.01); H01L 22/20 (2013.01);
Abstract

A method of thermally treating a wafer includes loading a wafer into a process chamber having one or more regions of uniform temperature gradient and one or more regions of non-uniform temperature gradient. A defect is detected in the wafer. The wafer is aligned to position the defect within one of the one or more regions of uniform temperature gradient. A rapid thermal process is performed on the wafer in the process chamber while the defect is positioned within one of the one or more regions of uniform temperature gradient.


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