The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2014
Filed:
May. 15, 2013
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Jong-Hoon Kang, Suwon-si, KR;
Tae-Gon Kim, Seoul, KR;
Han-Mei Choi, Seoul, KR;
Eun-Young Jo, Seoul, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 27/108 (2006.01); H01L 21/3213 (2006.01); H01L 23/544 (2006.01); H01L 49/02 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
H01L 21/027 (2013.01); H01L 2223/54453 (2013.01); H01L 2223/54426 (2013.01); H01L 27/10894 (2013.01); H01L 2223/5442 (2013.01); H01L 21/32139 (2013.01); H01L 23/544 (2013.01); H01L 27/10852 (2013.01); H01L 28/91 (2013.01);
Abstract
An alignment mark is formed on a substrate including a first region and a second region. The alignment mark is formed in the second region. An etch target layer including a crystalline material is formed on the alignment mark and the substrate. The etch target layer in the first region is partially amorphized. The amorphized etch target layer is etched to form an opening.