The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2016
Filed:
Dec. 09, 2013
Tae-gon Kim, Seoul, KR;
Jong-hoon Kang, Seoul, KR;
Jae-young Ahn, Seongnam-si, KR;
Jun-kyu Yang, Seoul, KR;
Han-mei Choi, Seoul, KR;
Ki-hyun Hwang, Seongnam-si, KR;
Tae-Gon Kim, Seoul, KR;
Jong-Hoon Kang, Seoul, KR;
Jae-Young Ahn, Seongnam-si, KR;
Jun-Kyu Yang, Seoul, KR;
Han-Mei Choi, Seoul, KR;
Ki-Hyun Hwang, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
According to example embodiments of inventive concepts, a method of fabricating a semiconductor device includes: forming a preliminary stack structure, the preliminary stack structure defining a through hole; forming a protection layer and a dielectric layer in the through hole; forming a channel pattern, a gapfill pattern, and a contact pattern in the through hole; forming an offset oxide on the preliminary stack structure; measuring thickness data of the offset oxide; and scanning the offset oxide using a reactive gas cluster ion beam. The scanning the offset oxide includes setting a scan speed based on the measured thickness data of the offset oxide, and forming a gas cluster.