Seongnam, South Korea

Jae-young Ahn

This inventor holds 37 USPTO granted patents and 5 published patent applications, primarily in Vertical Memory Devices. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2003-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jae-young Ahn. Retrieved from https://idiyas.com/inventor/jae-young-ahn-h3jl68sg

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 37 

% Patents Active = 78.4

Average Co-Inventor Count = 5.4

ph-index = 10

Forward Citations = 430(Granted Patents)


Location History:

  • Gyeonggi-do, KR (2008 - 2016)
  • Seongnam-si, KR (2003 - 2020)

Company Filing History:


Years Active: 2003-2020

Loading Chart...
Areas of Expertise:
Vertical Memory Devices
Semiconductor Devices
Non-Volatile Memory
3D Memory
Oxidation Target Layers
Charge Trap Memory
Silicon Oxide Layers
Fabrication Methods
Tunnel Insulation Structures
Gate Electrode Formation
Capacitor Design
Vertical-Type Devices
37 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Jae-young Ahn in Semiconductor Technology

Introduction: Jae-young Ahn, based in Seongnam-si, South Korea, is a prominent inventor recognized for his significant advancements in semiconductor technology. With an impressive portfolio of 37 patents, Ahn's contributions have paved the way for innovative developments in memory devices and related manufacturing methods.

Latest Patents: Among his latest patents is a groundbreaking semiconductor device that includes a vertical channel layer and a specific method for manufacturing the same. This invention encompasses a substrate with multiple gate electrodes arranged in a distinct configuration, facilitating the integration of a vertical channel layer that penetrates through the gate electrodes and insulating layers. This innovation aims to enhance the performance and efficiency of semiconductor devices.

Another notable patent is focused on vertical memory devices, which feature a series of stacked structures along with inter-structure layers and a channel structure. This design includes multiple gate electrodes and alternating insulation film patterns that are intricately stacked, promoting improved operational capabilities for memory devices.

Career Highlights: Jae-young Ahn works at Samsung Electronics Co., Ltd., a leader in the field of technology and electronics. His role in the company has been pivotal in driving research and development efforts that fuel technological advancements in semiconductors and electronic devices.

Collaborations: Ahn has had the opportunity to collaborate with esteemed colleagues, including Ki-Hyun Hwang and Jun-Kyu Yang. Their teamwork has resulted in innovative ideas and solutions that further advance the capabilities of semiconductor technology.

Conclusion: Jae-young Ahn's innovative spirit and dedication to research have firmly established him as a key figure in the semiconductor industry. His extensive patent portfolio not only showcases his creativity and expertise but also contributes to the evolution of technology in various applications. As he continues to work with leading professionals in the field, the impact of his inventions will undoubtedly shape the future of the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…