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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9698233 B1

PDFFull Text
Date of Patent:
Jul. 04, 2017

Filed:

Mar. 11, 2015

Tunnel insulation layer structures, methods of manufacturing the same, and vertical memory devices including the same

Applicants:

Eun-yeoung Choi, Seoul, KR;

Young-jin Noh, Suwon-si, KR;

Bi-o Kim, Seoul, KR;

Kwang-min Park, Seoul, KR;

Jae-young Ahn, Seongnam-si, KR;

Ju-mi Yun, Pocheon, KR;

Jae-ho Choi, Busan, KR;

Ki-hyun Hwang, Seongnam-si, KR;

Inventors:

Eun-Yeoung Choi, Seoul, KR;

Young-Jin Noh, Suwon-si, KR;

Bi-O Kim, Seoul, KR;

Kwang-Min Park, Seoul, KR;

Jae-Young Ahn, Seongnam-si, KR;

Ju-Mi Yun, Pocheon, KR;

Jae-Ho Choi, Busan, KR;

Ki-Hyun Hwang, Seongnam-si, KR;

Assignee:

Samsung Electronics Co., Ltd., , KR;

Attorney:

Myers Bigel, P.A.

Primary Examiner:

Ermias Woldegeorgis

Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 29/51 (2006.01); H01L 27/11582 (2017.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 29/513 (2013.01); H01L 21/28282 (2013.01); H01L 27/11582 (2013.01); H01L 29/518 (2013.01);
Abstract

Tunnel insulation layer structures and methods of manufacturing the same are disclosed. The tunnel insulation layer structures may include a first tunnel insulation layer, a second tunnel insulation layer, a third tunnel insulation layer, a fourth tunnel insulation layer and a fifth tunnel insulation layer. The first tunnel insulation layer on a substrate has a first band gap energy. The second tunnel insulation layer on the first tunnel insulation layer has a second band gap energy which is lower than the first band gap energy. The third tunnel insulation layer on the second tunnel insulation layer has a third band gap energy which is higher than the second band gap energy. The fourth tunnel insulation layer on the third tunnel insulation layer has a fourth band gap energy which is lower than the third band gap energy. The fifth tunnel insulation layer on the fourth tunnel insulation layer has a fifth band gap energy which is higher than the fourth band gap energy.

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