Ju-Mi Yun

Title: Ju-Mi Yun: Innovator in Semiconductor Technology

Introduction

Ju-Mi Yun is a prominent inventor based in Pocheon-si, South Korea. She has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. Her work focuses on innovative semiconductor devices and methods of manufacturing them.

Latest Patents

Ju-Mi Yun's latest patents include advancements in semiconductor devices. One notable patent describes a semiconductor device that features a tunnel insulation layer disposed on a substrate. This layer consists of a first silicon oxide layer, a second silicon oxide layer, and a silicon layer interposed between them. The silicon layer is designed to have a thickness smaller than that of the silicon oxide layers. Additionally, a gate pattern is placed on the tunnel insulation layer. Another patent focuses on non-volatile semiconductor devices, which share similar structural characteristics and innovations.

Career Highlights

Ju-Mi Yun is currently employed at Samsung Electronics Co., Ltd., where she continues to push the boundaries of semiconductor technology. Her work has been instrumental in developing new methods that enhance the performance and efficiency of semiconductor devices.

Collaborations

Ju-Mi has collaborated with notable colleagues, including Young-jin Noh and Kwang-Min Park, contributing to a dynamic and innovative work environment.

Conclusion

Ju-Mi Yun's contributions to semiconductor technology exemplify her dedication to innovation and excellence in her field. Her patents reflect her expertise and commitment to advancing technology in meaningful ways.