The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2017
Filed:
Dec. 09, 2015
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;
Ju-Mi Yun, Pocheon-si, KR;
Young-Jin Noh, Suwon-si, KR;
Kwang-Min Park, Seoul, KR;
Jae-Young Ahn, Seongnam-si, KR;
Guk-Hyon Yon, Hwaseong-si, KR;
Dong-Chul Yoo, Seongnam-si, KR;
Joong-Yun Ra, Seongnam-si, KR;
Young-Seon Son, Hwaseong-si, KR;
Jeon-Il Lee, Suwon-si, KR;
Hun-Hyeong Lim, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;
Abstract
A semiconductor device is provided as follows. A tunnel insulation layer is disposed on a substrate. The tunnel insulation layer includes a first silicon oxide layer, a second silicon oxide layer, and a silicon layer interposed between the first silicon oxide layer and the second silicon oxide layer. The silicon layer has a thickness smaller than a thickness of each of the first silicon oxide layer and the second silicon oxide layer. A gate pattern is disposed on the tunnel insulation layer.